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Academic Experts
Dr. Hemant Kumar

Biography

Dr. Hemant Kumar is an Associate Professor in the Department of Electronics and Communication Engineering at JIIT, Noida. He received his PhD from IIT (BHU) in 2018 and M.Tech from ABV-IIITM Gwalior in 2011, with professional experience spanning nine years in academia and one year in industry. 

His research expertise lies in the fabrication and characterization of quantum dot-based thin-film devices with applications in optoelectronics, biosensing, and solar cells. 

He has played a key role in setting up the VLSI fabrication and characterization lab and the R&D project lab, and is currently the Principal Investigator for the C2S program. He has also successfully completed a SERB-SRG project and continues to make active contributions toward advancing research and innovation in his field.

Include:

  • Current position & affiliation: Associate Professor in Department of Electronics and Communication, JIIT, Noida
  • Educational qualifications: PhD from IIT (BHU) in 2018, M.Tech from ABV-IIITM Gwalior in 2011, B.E from RJIT Gwalior in 2009.
  • Work experience (years, sectors): 9 Years Teaching, 1 Year Industry
  • Research/teaching domains: Fabrication of Semiconductor Devices
  • Key leadership roles (lab establishment, committees): VLSI Fabrication and Characterization Lab and R&D Project Lab
  • Major collaborations & industry linkages
  • Awards or notable recognitions: Completed one SERB-SRG Project, PI of C2S Project

Educational Qualifications

Ph.D., Microelectronics, IIT(BHU), Varanasi, 2018, M.Tech., Digital Communication, IIIT, Gwalior, 2011, B.E., Electronics and Communication, RJIT, Gwalior, 2009

Research Highlights

Dr. Hemant Kumar’s research focuses on the fabrication and characterization of quantum dot-based thin-film devices, with emphasis on developing low-cost, solution-processed optoelectronic systems. His core areas include photodetectors, gas sensing, solar cells, and other optoelectronic applications. 

A key innovation from his work is the development of self-powered photodetectors enhanced by the pyro-phototronic effect, which demonstrate an improved figure of merit while significantly reducing fabrication costs through the use of solution-processed nanomaterials. This approach not only advances device performance but also provides a pathway toward scalable, energy-efficient, and affordable optoelectronic technologies.

His research contributions extend to a wide range of applications, including high-sensitivity photodetection, environmental monitoring through gas sensors, and efficient solar energy harvesting. These efforts address both academic challenges and industry needs in next-generation optoelectronics. 

Dr. Kumar has built strong collaborative networks with leading researchers across India, including Dr. Bratindra Nath Mukherjee, Dr. Satyabarat Jit, and Dr. Bhola Nath Pal (IIT BHU); Dr. Gopal Rawat (NIT Surathkal); Dr. Kunal Singh (NIT Jamshedpur); and Dr. Yogesh Kumar (MITS Gwalior). Such collaborations have strengthened his research outcomes and widened their impact.

Include:

  • Core research focus areas: Fabrication of Semiconductor Devices
  • Notable innovations or findings: Self-Powered photodetectors with improved Figure of Merit through Pyro-phototronic Effect, while reducing the overall cost of fabrication by using solution processed materials.
  • Applications of research : Photodetectors, Gas Sensing, Solar Cells, Optoelectronic applications
  • Collaborations (national/international): Dr. Bratindranath Mukherjee, Assistant professor, IIT BHU, Dr. Satyabarat Jit, Professor, IIT BHU, Dr. Bhola Nath pal, Associate Professor, IIT BHU, Dr. Gopal Rawat, Assistant Professor, NIT Surathkal, Dr. Kunal Singh, Assistant Professor, NIT Jamsedhpur, Dr. Yogesh Kumar, Assistant Professor, MITS Gwalior

Key funded projects/research grants: 

  • Development of Tunable Self-Powered Quantum Dot Based Photodetectors Using Low-Cost Solution Processed Method from SERB-SRG with a funding of 30.36 Lakhs
  • Development of Bilayer Photodetectors based on Ferroelectric materials and ZnO QDs for Artificial Synaptic Application from UPCST with a funding of 14.58 Lakhs
  • Impact on industry/academia
Areas of Interest
  • Optoelectronics
  • Photodetectors
  • Solar Cell, Gas Sensing, Quantum Dots (QDs)
  • Self-Powered Photodetectors
  • Pyro-Phototronic Effect
  • Solution-Processed Materials
  • VLSI Fabrication & Characterization
  • Spectrum-Selective Detectors
Patents

Patent Title: A Colloidal Quantum Dots (QDs) Based Ion Sensitive Field Effect Transistor.

Granting ID: 59878

Specification: Patent for fabricating ISFET utilizing two layers of QDs one for transporting charge carriers and other for reducing the ageing effect.

Dr. Hemant Kumar - ASSOCIATE PROFESSOR | JIIT Noida