Spot Admission Open for few vacancies in BTech-ECE (Sector-128), Integrated MTech-ECE and Integrated MTech-Biotechnology (Sector-62).            JEE AIR / 10+2 Based Admission-Upgradation-8 (26 Nov 2021). Please check webportal.                                                                The Website of "SAI ADVANCE COVID CARE CENTRE” http://saiadvancecovidcarecentre.in at JIIT Campus, Sector-128, Wish Town Noida. ; a collaborative effort between JIIT Noida & Jaypee Hospital for welfare of society during pandemic is now live.

Jaypee Institute of Information Technology, Noida
Assistant Professor (Senior Grade)
ajay.kumar@jiit.ac.in

EDUCATIONAL QUALIFICATIONS

  • Ph.D. from Delhi Technological University (DTU), Delhi, INDIA, 2019.
  • M. Tech. from Delhi Technological University (DTU), Delhi, INDIA, 2014.
  • B. Tech. in Electronics & Communication Engineering, UPTU, 2009.

BIOGRAPHY

Currently Assistant Professor (Sr. Grade) in Electronics and Communication Engineering Department in Jaypee Institute of Information Technology (JIIT), Noida, Sec-62.

Junior Research Fellow in DST, SERB Fast Track Project in Microelectronics Research Lab, Delhi Technological University Delhi, INDIA (July 2014-July 2016).

Visiting faculty in department of Engg. Physics in Delhi Technological University, Delhi. (2014-2016).

Visiting faculty in department of Electronics and Communication in Netaji Subhash University of Technology (NSUT), Delhi. (Jan-May, 2018).

RESEARCH INTEREST

Semiconductor Device Modeling and Simulation such as Nanoscale MOSFET, FinFET, TFET, SiNW MOSFET and Solar cell.

TEACHING/RESEARCH EXPERIENCE

4 Years +

PUBLICATIONS

Book Chapter:

  1. Ajay Kumar, Amit Kumar Goyal, Manan Roy, Neha Gupta ,M. M. Tripathi, and R. Chaujar, “Detection of Hazardous Analyte Using Transparent Gate Thin Film Transistor”, Micro-Electronics and Telecommunication Engineering. Lecture Notes in Networks and Systems, vol 106. pp. 97-204. Springer Nature, 2019.DOI:https://doi.org/10.1007/978-981-15-2329-8_20.
  2. N. Gupta, A.  Kumar, R. Chaujar, Static and CV Analysis of Gate Engineered GAA Silicon Nanowire MOSFET for High-Performance Applications. Energy Systems, Drives and Automations. Lecture Notes in Electrical Engineering, vol 664, pp.59-68. (2020) Springer, Singapore. https://doi.org/10.1007/978-981-15-5089-8_6.

International Journals

Monograph

  1. A. Kumar.  “Effect of Trench Depth and Gate Length Shrinking Assessment on the Analog and Linearity Performance of TGRC-MOSFET” Superlattices and Microstructures, Elsevier,Volume 109, September 2017, Pages 626-640. DOI: 10.1016/j.spmi.2017.05.045. (IF: 2.120).
  2. A. Kumar.“Palladium-based Trench Gate MOSFET for Highly Sensitive Hydrogen Gas Sensor”, in Materials Science in Semiconductor Processing, Elsevier. Volume 120, December 2020, Pages 105274. DOI: https://doi.org/10.1016/j.mssp.2020.105274.(IF: 3.085).
  3. A. Kumar, “Assessment of High-ᴋGate Stacked In2O5Sn Gate Recessed Channel MOSFET for X-Ray Radiation Reliability”, in Engineering Research Express, IOP. Vol. 2(3), pp. 035017. 2020. DOI: https://doi.org/10.1088/2631-8695/abaf0a.

2021

  1. A. Kumar, and U. Gupta, “Numerical Assessment of High-Efficiency Lead-Free Perovskite Solar Cells”, Materials Today: Proceeding, Elsevier.Volume 45, Part 6, 2021, Pages 5041-5046 (Scopus Indexed). https://doi.org/10.1016/j.matpr.2021.01.541.
  2. A. Kumar, S. D. Saurbh and H. Sharma, “Perovskite-CIGS Materials Based Tandem Solar Cell with an Increased Efficiency of 27.5%”, Materials Today: Proceeding, Elsevier.Volume 45, Part 6, 2021, Pages 5047-5051 (Scopus Indexed). https://doi.org/10.1016/j.matpr.2021.01.565.
  3. N. Gupta, and A. Kumar “Numerical assessment of high-k spacer on symmetric S/D underlap GAA junctionless accumulation mode silicon nanowire MOSFET for RFIC design”, Applied Physics A, Springer. Vol. 127, pp.76, 2021 (IF: 1.81).

2020

  1. N. Gupta, and A. Kumar, “Assessment of High-k Gate Stack on Sub-10nm SOI-FinFET for High-Performance Analog and RF Applications Perspective”, in ECS Journal of Solid State Science and Technology. (IF: 2.142)
  2. A. Kumar, A. K. Goyal, and N. Gupta, “Thin-Film Transistors (TFTs) for Highly Sensitive Biosensing Applications: A Review”, in ECS Journal of Solid State Science and Technology. Vol. 9 (11), pp. 115022. (IF: 2.142)
  3. Ajay Kumar,Uddeshya Gupta, Tanya,RishuChaujar, M.M. Tripathi, andNeha Gupta, “Simulation of Perovskite Solar Cell Employing ZnO as Electron Transport Layer (ETL) for Improved Efficiency”, Materials Today: Proceeding, Elsevier, Vol. 28, 2020, Pages 361-365.
  4. A. K. Goyal, A. Kumar, "Recent advances and progresses in photonic devices for passive radiative cooling application: a review," Journal of Nanophotonics. 14(3), 030901 (2020), doi: 10.1117/1.JNP.14.030901. (IF: 1.415)
  5. A. Kumar, N. Gupta, M. M. Tripathi and R. Chaujar, “Reliability of Sub-20 nm Black Phosphorus Trench (BP-T) MOSFET in High-Temperature Harsh Environment”, in Silicon, Springer Nature, (IF: 1.499).
  6. P. M. Tripathi, H. Soni, R. Chaujar and A. Kumar. "Numerical Simulation and Parametric Assessment of GaN Buffered Trench Gate MOSFET for Low Power Applications." IET Circuits, Devices & Systems Vol. 14, Issue 6, September 2020, p. 915 – 922 (2020). (IF: 1.277)
  7. A. Kumar, N. Gupta,M. Roy, M. M. Tripathi, and R. Chaujar, “Dielectric Modulated Transparent Gate Thin Film Transistor for Biosensing Applications”, Materials Today: Proceeding, Elsevier. Vol. 28, 2020, Pages 141-145.
  8. A. Kumar, A. K. Goyal, U. Gupta, Tanya,N. Gupta,and R. Chaujar, “Increased Efficiency of 23% for CIGS Solar Cell by Using ITO as Front Contact”, Materials Today: Proceeding, Elsevier. Vol. 28, 2020, Pages 361-365.
  9. A. Kumar, S. K. Tripathi, N. Gupta, M. M. Tripathi and R. Chaujar, “Performance Evaluation of Linearity and Intermodulation Distortion of NanoscaleGaN-SOI FinFET for RFIC Design” AEUInternational Journal of Electronics and Communication, Elsevier. Vol. 115, 2020. (IF: 2.924)
  10.  N. Gupta, A. Kumar, and R. Chaujar,” Design Considerations and Capacitance Dependent Parametric Assessment of Gate Metal Engineered SiNW MOSFET for ULSI Switching Applications”, Silicon, SpringerNature, Vol. 12, pp. 1501-1510, 2020. https://doi.org/10.1007/s12633-019-00246-x.(IF: 1.499).
  11. A. Kumar, N. Gupta, M. M. Tripathi and R. Chaujar, “Analysis of Structural Parameters on Sensitivity of Black Phosphorus Junctionless Recessed Channel MOSFET for Biosensing Application”, in Microsystem Technologies, SpringerNature.Vol. 26, pp. 2227–2233, 2020.DOI: 10.1007/s00542-019-04545-6. (IF: 1.737)

2019

  1. A. Kumar, M. M. Tripathi and R. ChaujarSub-30nm In2O5Sn Gate Electrode Recessed Channel MOSFET: A Biosensor for Early Stage Diagnostics” Vacuum, Elsevier. Vol. 164, pp. 46-52, 2019. DOI: 10.1016/j.vacuum.2019.02.054.(IF: 2.515).
  2. AnujChhabra, Ajay Kumar and RishuChaujar, “Sub-20nm GaAsJunctionlessFinFET for Biosensing Application”, Vacuum. Vol. 160, pp. 467-471, 2019. DOI: 10.1016/j.vacuum.2018.12.007. (IF: 2.515).
  3. Ajay Kumar, Neha Gupta, MM Tripathi, and RishuChaujar, “RF Noise Modeling of Black Phosphorus Junctionless Trench MOSFET in Strong Inversion Region”, Superlattices and Microstructures. Vol. 125, pp. 72-79, 2019. DOI: 10.1016/j.spmi.2018.10.025. (IF: 2.385).

2018

  1. Ajay Kumar, MM Tripathi, and RishuChaujarReliability Issues of In2O5Sn Gate Electrode Recessed Channel MOSFET: Impact of Interface Trap Charges and TemperatureIEEE Transactions on Electron Devices, Vol.65, Issue 3, pp 860-866. DOI: 10.1109/TED.2018.2793853. (IF: 2.704)
  2. Ajay Kumar, BalarkTiwari, Samarth Singh, MM Tripathi, and RishuChaujarRadiation Analysis of N-Channel TGRC-MOSFET: An X-Ray Dosimeter” IEEE Transactions on Electron Devices. Vol.65, pp 5014-5020, 2018.DOI: 10.1109/TED.2018.2869536.(IF: 2.704)
  3. Ajay Kumar, MM Tripathi, and RishuChaujarUltralow-power dielectric-modulated nanogap-embedded sub-20-nm TGRC-MOSFET for biosensing applications” Journal of Computational Electronics, Springer. Vol 17, pp 1807-1815.DOI: 10.1007/s10825-018-1237-2.(IF: 1.637)
  4.  Ajay Kumar, MM Tripathi, and RishuChaujarIn2O5Sn Based Transparent Gate Recessed Channel MOSFET: RF Small-Signal Model for Microwave Applications” AEUInternational Journal of Electronics and Communication, ElsevierVol 93, Issue 9, pp 233–241. DOI: 10.1016/j.aeue.2018.06.014.(IF: 2.853)
  5. Ajay Kumar, MM Tripathi, and RishuChaujarComprehensive Analysis of Sub-20nm Black Phosphorus Based Junctionless-Recessed Channel MOSFET for Analog/RF Applications” Superlattices and Microstructures, ElsevierVolume 116, April 2018, Pages 171-180. DOI: 10.1016/j.spmi.2018.02.018. (IF: 2.385)

2017

  1. Ajay Kumar, Neha Gupta and RishuChaujar, “Effect of Structured Parameters on the Hot-Carrier Immunity of Transparent Gate Recessed Channel (TGRC) MOSFET”, in Microsystem Technologies, Springer, September 2017, Volume 23, Issue 9, pp 4057–4064. DOI: 10.1007/s00542-016-2918-z. (IF: 1.513).
  2. Ajay Kumar, MM Tripathi, and RishuChaujarInvestigation of Parasitic Capacitances of In2O5Sn Gate Electrode Recessed Channel MOSFET for ULSI Switching Applications” Microsystem Technologies, SpringerVol 23, Issue 12, pp 5867–5874, 2017.DOI: 10.1007/s00542-017-3348-2. (IF: 1.513)

2016

  1. Ajay Kumar, Neha Gupta and RishuChaujarPower gain assessment of ITO based Transparent Gate Recessed Channel (TGRC) MOSFET for RF/Wireless Applications” Superlattices and Microstructures, Elsevier, vol. 91 pp.290-301, 2016,ISSN: 0749-6036. DOI: 10.1016/j.spmi.2016.01.027. (IF: 2.385)
  2. Ajay Kumar, Neha Gupta and RishuChaujarTCAD RF Performance Investigation of Transparent Gate Recessed Channel MOSFET” Microelectronics Journal, Elsevier, Vol. (49), pp. 36-42, 2016. DOI: 10.1016/j.mejo.2015.12.007.(IF: 1.284)

2015

  1. Ajay Kumar, Neha Gupta and RishuChaujar, “Analysis of Novel Transparent Gate Recessed Channel (TGRC) MOSFET for Improved Analog Behaviour”, in Microsystem Technologies, Springer, 2015, vol. 22(11) pp. 2665-2671. doi:10.1007/s00542-015-2554-z.ISSN: 0946-7076. (IF: 1.513)
  2. Neha Gupta, Ajay Kumar and RishuChaujar,” Oxide Bound Impact on Hot-Carrier Degradation for Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET”, in Microsystem Technologies, Springer, 2015. Vol. 22 (11), pp. 2655-2664. doi: 10.1007/s00542-015-2557-9.ISSN: 0946-7076. (IF: 1.513).
  3. Neha Gupta, Ajay Kumar and RishuChaujar, “Impact of Device Parameter Variation on RF performance of Gate Electrode Workfunction Engineered (GEWE)-Silicon Nanowire (SiNW) MOSFET”, Journal of Computation Electronics, Springer, Vol. 14(3), pp. 798-810, 2015. DOI: 10.1007/s10825-015-0715-z.ISSN: 1569-8025. DOI: 10.1007/s10825-015-0715-z. (IF: 1.637).

2014

  1. Ajay Kumar, Neha Gupta and RishuChaujar, “Investigation Of Frequency Dependence On The Noise Response of a Novel Transparent Gate Recessed Channel MOSFET”, International Journal of Electrical and Electronics Engineers, Vol.6, no. 2, Dec, 2014, ISSN: 2321-2055 (online). (IF: 2.7)
  2. Neha Gupta, Ajay Kumar and RishuChaujar, “Investigation of Frequency Dependent parameter of GEWE-SiNW MOSFET for Microwave and RF Applications”, International Journal of Advanced Technology in Engineering and Science, Vol. 2, Sept. 2014, ISSN (Online): 2348 – 7550. (IF: 2.870).

International Conference

2021

  1. S. Sahu, M. M. Tripathi and A. Kumar,, "Numerical Simulation of GaN-BTG MOSFET for Suppression of SCEs," 3rd International conference “Devices for Integarted Circuits (DevIC 2021), Kalyani Government Engineering College from May 19-20, 2021. (Accepted)
  2. S. Sahu, M. M. Tripathi and A. Kumar,, "Performance Investigation of Nanoscaled GaN-BTG MOSFET for Analog/Linearity and Low Power Applications" ICTE Sponsored 2021 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO 2021) Mangalam College of Engineering, Ettumanoor, Kottayam, Kerala, India. 29th & 30th April, 2021

2020

  1. N. Gupta, S. Singh, R. Chaujar and A. Kumar, “Static and Thermal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET for Temperature Tolerance Applications”, National E-Conference on Recent Advancements in Science and Technology (NECRAST 2020) 27th-28th July, ADGITM, New Delhi, 2020.
  2. A. Kumar,U. Gupta, Tanya, andN. Gupta, “Simulation of Perovskite Solar Cell Employing ZnO as Electron Transport Layer (ETL) for Improved Efficiency”, Innovative Manufacturing, Mechatronics & Materials Forum 2020 (iM3F 2020)6th August 2020, University Malaysia Pahang.
  3. A. Kumar, S. Saini, A. Gupta, N. Gupta, M. M. Tripathi and R. Chaujar, "Sub-10 nm High-k Dielectric SOI-FinFET for HighPerformance Low Power Applications," 2020 6th International Conference on Signal Processing and Communication (ICSC), Noida, India, 2020, pp. 310-314, doi: 10.1109/ICSC48311.2020.9182748..
  4. H. Yadav, A. Kumar Goyal and A. Kumar, "Design Analysis and Comparative Study of GDI Based Full Adder Design," 2020 6th International Conference on Signal Processing and Communication (ICSC), Noida, India, 2020, pp. 319-321, doi: 10.1109/ICSC48311.2020.9182726.
  5. A. Kumar, P. Sood and U. Gupta, "Internet of Things (IoT) for Bank Locker Security System," 2020 6th International Conference on Signal Processing and Communication (ICSC), Noida, India, 2020, pp. 315-318, doi: 10.1109/ICSC48311.2020.9182713..
  6. N. Gupta, A. Kumar, R. Chaujar, B. Kumar and M. M. Tripathi, "Gate Engineered GAA Silicon-Nanowire MOSFET for High Switching Performance," 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), Kolkata, India, 2020, pp. 258-262, doi: 10.1109/VLSIDCS47293.2020.9179932.
  7. B. Kumar, A. Kumar and R. Chaujar, "The Effect of Gate Stack and High-ĸ Spacer on Device Performance of a Junctionless GAA FinFET," 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), Kolkata, India, 2020, pp. 159-163, doi: 10.1109/VLSIDCS47293.2020.9179855.
  8. H. Soni, P. M. Tripathi, M. M. Tripathi, A. Kumar and R. Chaujar, "Thermal Reliability of GaN-BTG-MOSFET for High-Performance Applications in Integrated Circuits," 2020 IEEE 40th International Conference on Electronics and Nanotechnology (ELNANO), Kyiv, Ukraine, 2020, pp. 220-223, doi: 10.1109/ELNANO50318.2020.9088791.

2019

  1. Ajay Kumar, M. M. Tripathi, and R. Chaujar, “Low-Temperature Reliability of Sub-20nm 4H-SiC Trench MOSFET with Black Phosphorus Gate Material”, IEEE International Conference onSignal Processing and Communication (ICSC), JIIT Noida, India, 7th to 9th March 2019.
  2. Ajay Kumar, ShlokSrivastava and UtkarshGupta,“Internet of Things (IoT) Based Smart Shopping Centre Using RFID”, IEEEInternational Conference onSignal Processing and Communication (ICSC), JIIT Noida, India, 7th to 9th March 2019.
  3. Ajay Kumar, Manan RoyM. M. Tripathi, and R. Chaujar,“TCAD Analysis of Transparent Gate Thin Film Transistor (TFTs) for High Performance Applications”,International Conference onPhotonics, Metamaterials and Plasmonics (PMP), JIIT Noida, India, 14th to 16th Feb2019.https://doi.org/10.1063/1.5120917.
  4. Ajay Kumar, Neha Gupta,M. M. Tripathi, and R. Chaujar, “Non-Quasi-Static Small-Signal Modeling of TGRC MOSFET in Parameter Perspective for RF/Microwave Applications”, IEEE International Conference onModern Circuits and Systems Technologies (MOCAST), Thessaloniki, Greece, 13th to 15th May2019.DOI: 10.1109/MOCAST.2019.8742066.
  5. AnujChhabra, Ajay Kumar and RishuChaujar, “High Temperature Reliability of GaAsJunctionlessFinFET Using High-ᴋ Material”, ICECA 2019, the 3rd International Conference onElectronics, Communication and Aerospace Technology, Coimbatore, India, 12-14 June,2019.
  6. Ajay Kumar, Pranav ManiTripathi, Neha Gupta,M. M. Tripathi, and R. Chaujar, “TCAD Assessment of GaN Silicon-on-Insulator (SOI) N-Channel FinFET for High-Performance Low Power Applications”, 14th IEEE Nanotechnology Materials and Devices Conference (NMDC) 2019, Stockholm, Sweden, 27-30October, 2019.
  7. Ajay Kumar, Neha Gupta, Samarth Singh, BalarkTiwari, MM Tripathiand RishuChaujar,“Carbon Nanotube Recessed Channel (CNT-RC) MOSFET for High Linearity/ULSI Applications. IEEE Region 10 Conference (TENCON), Kochi, Kerala, India, 17-20 October,2019.

2018

  1. Ajay Kumar,AnujChhabra and RishuChaujar, “GaAsJunctionlessFinFET Using High-ᴋ Dielectric for High-Performance Applications”, 2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO-2018) , Igor Sikorsky Kyiv Polytechnic Institute.Kiev, 8-9, PP 126-129, Feb. 2018.DOI: 10.1109/ELNANO.2018.8477506.
  2. Ajay Kumar, MM Tripathi, and RishuChaujar, “Sub-20nm In2O5Sn Gate Electrode Recessed Channel MOSFETfor Bio-sensing Applications” ISFM 2018Chandigarh, India.
  3. Ajay Kumar, MM Tripathi, and RishuChaujar, “High-Temperature Reliability of Black Phosphorus Recessed Channel (BPRC) MOSFET” 7thInternational Conference on Computing, Communication and Sensor Network (CCSN) 2018, 27-28 October, Kolkata India.
  4. Ajay Kumar, MM Tripathi, and RishuChaujar, “TCAD Analysis of Sub-20 nm Black Phosphorus Trench (BP-T) MOSFET for High Temperature Applications” 7thInternational Conference on Computing, Communication and Sensor Network (CCSN) 2018, 27-28 October, Kolkata India.
  5. Ajay Kumar, MM Tripathi, and RishuChaujar, “Linearity and Distortion Assessment of Black Phosphorus-Based Junctionless RC-MOSFET” 2018 3rd IEEE International Conference
  6. on Recent Trends in Electronics, Iinformation& Communication Technology (RTEICT), Sri Venkateshwara College of Engineering, Bengaluru 18-19 May 2018.
  7. Ajay Kumar, MM Tripathi, and RishuChaujar, “Investigation of Different Gate Materials onto Recessed Channel (RC) MOSFET for Improved Device Performance” 3rd IEEE International Conferenceon Recent Trends in Electronics, Iinformation& Communication Technology (RTEICT), Sri Venkateshwara College of Engineering, Bengaluru 18-19 May 2018.
  8. Ajay Kumar, Samarth Singh, Balarktiwari, and RishuChaujar,“Temperature Reliability of Junctionless Twin Gate Recessed Channel (JL-TGRC) MOSFET with Different Gate Material for Low Power Digital-Logic Applications. IEEE Region 10 Conference (TENCON), Jeju Island, Korea, 28-31 October 2018.DOI:10.1109/TENCON.2018.8650267.
  9. AnujChhabra, Ajay Kumar and RishuChaujar, “GaAsJunctionlessFinFET Using Si3N4 Spacer for High performance Analog Application”, 2018 International Conference On Advances in Communication and Computing Technology (ICACCT), pp483-486,Pune, 8-9 Feb. 2018.DOI: 10.1109/ICACCT.2018.8529390.
  10. AnujChhabra, Ajay Kumar and RishuChaujar, “GaAsJunctionlessFinFET Using High-ᴋ Dielectric for Protein Sensing Application”, ISFM-2018, Chandigarh, India.

2017

  1. Ajay Kumar, MM Tripathi, and RishuChaujar  “Low Power, Highly Sensitive Nano-gap Embedded TGRC-MOSFET for the Detection of Neutral Biomolecules” 5th International Conference on Bio-Sensing TechnologyRiva Del Garda, Italy (Elsevier) P-115. 7-10 May 2017.
  2. Ajay Kumar, DivyaKaur,MM Tripathi, and RishuChaujar “Influence of High-k Gate on Transparent Gate Recessed Channel (TGRC) MOSFET: A reliability Study”International Conference on Microelectronics Devices, Circuits and Systems (ICMDCS) 2017 Vellore.DOI: 10.1109/ICMDCS.2017.8211533.
  3. Ajay Kumar, MM Tripathi, and RishuChaujar “Effect of Interface Trap charge density on the reliability issues of TGRC-MOSFET: A reliability Study” International Conference on Microelectronics Devices, Circuits and Systems (ICMDCS) 2017 Vellore.DOI: 10.1109/ICMDCS.2017.8211538.
  4. Ajay Kumar, Samarth Singh, Balarktiwari, and RishuChaujar Twin Gate Rectangular Recessed Channel (TG-RRC) MOSFET for Digital-Logic Applications. International Conference on Microelectronics Devices, Circuits and Systems (ICMDCS) 2017 Vellore.DOI: 10.1109/ICMDCS.2017.8211564.
  5. Ajay Kumar, MM Tripathi, and RishuChaujar “Small-Signal Modeling of In2O5Sn Based Transparent Gate Recessed Channel MOSFET for Microwave/RF Applications” IEEE Asia-Pacific Microwave Conference (APMC) 2017 Kuala Lampur 16-17 Nov, pp. 976-979.DOI: 10.1109/APMC.2017.8251614.
  6. Ajay Kumar, MM Tripathi, and RishuChaujar “Sub-20 nm Black Phosphorus Junctionless-Recessed Channel (BP JL-RC) MOSFET: A Low Power Device” IEEE International Conference on Nanotechnology for Instrumentation and Measurement (NANOfIM) 2017 Noida, pp. 17.
  7. Ajay Kumar, Samarth Singh, Balarktiwari, M.M. Tripathi and RishuChaujar, “Junctionless Double Gate Recessed Channel (JL-DGRC) MOSFET for Digital-Logic Applications”. International Conference on Nanotechnology for Instrumentation and Measurement (NANOfIM) 2017 Noida, pp. 227.
  8. Ajay Kumar, MM Tripathi, and RishuChaujar, “Investigation of Novel Gate Materials on Recessed Channel (RC) MOSFET for High Performance Applications”pp. 402. ICN3I-2017, 6-8 Dec. IIT Roorkee.

2016

  1. Rahul Pandey, Apoorva Jain, Ajay Kumar and RishuChaujar, “Impact of Minority Carrier Lifetime and Temperature on SiC Based Rear Contact SiGe Solar Cell for Concentrator Photovoltaic (CPV) Applications”, pp. 270-273, 32nd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) Munich, 21-24 June 2016. ISBN:3-936338-41-8, DOI:10.4229/EUPVSEC20162016-1BV.6.45.

2015

  1. Ajay Kumar, Neha Gupta and RishuChaujar, “Analysis of Small Signal Behaviour of Transparent Gate Recessed Channel (TGRC) MOSFET for High Frequency/RF Applications” Tech-Connect World Innovation Conference & Expo, pp. 193-195, June 14-17, 2015, Washington DC, USA.ISBN:978-1-4987-4730-1
  2. Ajay Kumar, Neha Gupta and RishuChaujar, “Impact of Parameter Variation on the Hot-Carrier-Effect Immunity for Transparent Gate Recessed Channel (TGRC) MOSFET”, 2nd International Conference on Microelectronics, Circuits and Systems MICRO-2015, pp. 36-39, Kolkata, 11-12th July, 2015.ISBN: 81-85824-46-0.
  3. Ajay Kumar,Neha Gupta and RishuChaujar, “Highly Conductive ITO Based Transparent Gate Recessed ChannelMOSFET for Improved RF Performance”, IWPSD-2015, Bangalore, 7-10 December 2015.PP.359.
  4. Neha Gupta, Ajay Kumar and RishuChaujar, “TCAD Analysis of Frequency Dependent Intrinsic and Extrinsic parameters of GEWE-SiNW MOSFET”, Tech-Connect World Innovation Conference & Expo, pp. 185-188, 14-17th June 2015, Washington DC, USA. DOI: 10.13140/RG.2.1.3867.6322.
  5. Neha Gupta, Ajay Kumar and RishuChaujar, “TCAD AC Analysis of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET for High Frequency Applications”, Tech-Connect World Innovation Conference & Expo, pp. 181-184, 14-17th June 2015, Washington DC, USA.
  6. Neha Gupta, Ajay Kumar and RishuChaujar, “Effect of Dielectric Engineering on Analog and Linearity performance of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET”, 15th  International Conference on Nanotechnology, 27 - 30 July 2015, ROME (ITALY), pp. 928-931, DOI: 10.1109/NANO.2015.7388768.
  7. Neha Gupta, Ajay Kumar and RishuChaujar, “Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire (SiNW) MOSFET: A Solution for LNA at RF Frequency”, 2nd International Conference on Microelectronics, Circuits and Systems MICRO-2015, Kolkata, pp. 52-56, 11-12th July, 2015.ISBN: 81-85824-46-0.DOI:10.13140/RG.2.1.2441.5209.
  8. Neha Gupta, Ajay Kumar and RishuChaujar, “Quantum Mechanical C-V Analysis of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET for HF Applications”, IWPSD-2015, Bangalore, 7-10 December 2015.PP.360.

2014

  1. Ajay Kumar, RishuChaujar and Monica “Thermal Behavior of Novel Transparent gate Recessed Channel (TGRC) MOSFET: TCAD Analysis” Tech-Connect World Innovation Conference & Expo, June 15-18, 2014, Washington DC, USA.
  2. Ajay Kumar, RishuChaujar, and Neha Gupta, “Novel Design: Transparent Gate                                                                                                  Recessed Channel (TGRC) MOSFET for Improved Reliability Applications”, IEEE 1st International conference on Microelectronics, Circuits and Systems”, Kolkata, India, 2014, pp.1-5. ISBN: 81-85824-46-0.
  3. Ajay Kumar, Neha Gupta and RishuChaujar, “Intrinsic delay and power gain assessment of Transparent Gate Recessed Channel MOSFET for high performance RF/Wireless Applications, 3rd International Conference NANOCON 014,BhartiVidyapeeth Deemed University Pune, 14-15th October, 2014.
  4. Neha Gupta, Ajay Kumar and RishuChaujar, “Simulation analysis of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET for hot carrier reliability” IEEE 1st International Conference on Microelectronics, Circuits and Systems”, Kolkata, pp. 150-153, 11-13th July, 2014.
  5. Neha Gupta, Ajay Kumar and RishuChaujar, “Impact of Channel Doping and Gate Length on Small Signal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET at THz Frequency”, Fifth International Symposium on Electronic System Design, Mangalore, Karnataka, pp. 192-196, 15-17th December, 2014. doi 10.1109/ISED.2014.46

MEMBERSHIPS

  • Senior Member IEEE.
  • IEEE member of 5G Community.
  • IEEE member of Electron Devices Society.
  • IEEE member of Electron Devices Society.
  • IEEE member of Internet of Things Community.
  • IEEE member of Smart Cities Community
  • OSA Member.
  • Life time memberof Solar Society of India.

ACHIEVEMENTS

  • Reviewer of IEEE Transactions on Electron Devices.
  • Reviewer of IEEE Transactions on Microwave Theory and Techniques.
  • Reviewer of IEEE Access.
  • Reviewer of Microelectronics Journal, Elsevier.
  • Reviewer of Microelectronics Reliability, Elsevier.
  • Reviewer of Optical Materials, , Elsevier.
  • Reviewer of Silicon, Nature Springer.
  • Reviewer of Journal of Nanostructure in Chemistry, Nature Springer.
  • Reviewer of Semiconductor Science and Technology, IOP.
  • Reviewer of Advances in Natural Sciences: Nanoscience and Nanotechnology, IOP.
  • Reviewer of International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, John Wiley & Sons, Ltd.
  • Reviewer of International Journal of Electronics Letters, Taylor and Francis.
  • Reviewer of International journal of Nano Dimension.
  • Session chair in Asia Pacific Microwave Conference (APMC) 2017 in Kuala Lumpur, Malaysia.
  • Receive commendable research excellent award in 2018, presented by Delhi Technological University.
  • Receive commendable research excellent award in 2019, presented by Delhi Technological University.
  • Receive commendable research excellent award in 2020, presented by Delhi Technological University.
  • CBSE-NET JRF qualified December 2015.
  • UGC-NET qualified December 2013.
  • UGC-NET qualified June 2014.
  • CBSE-NET qualified December 2014.
  • CBSE-NET qualified June 2015
  • GATE qualified in 2012.