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JIIT MEMS Design Center

JIIT MEMS Design Center: MEMS Design Centre: The centre for MEMS design was set-up at JIIT in the year 2009 as a part of institute’s response to launch MEMS activity supported under National Program of Materials for Smart Sensors (NPMASS) by Govt. of India.

The program centers around collaborative research efforts, related to MEMS and smart sensors, of the Department of Electronics and Communication Engineering, Department of Physics and Materials Science and Department of Biotechnology.

The three departments share the simulation facility supported by NPMASS. The departments involved promote the area of sensors through independent department course at UG/PG levels to involve students and faculties in developing MEMS/sensor related project and research activities.

In the absence of required in-house comprehensive facilities for complete fabrication of MEMS/sensors, the short term strategy is to focus on design, modeling and characterization, outside foundries use chosen as option for fabrication and packaging.

Presently, the MEMS interest group comprises as below:

  • Prof. A.B. Bhattacharyya (Program Advisor /Director) ECE Department
  • Dr. Poonam Goel (Project Faculty: Assistant Prof. Grade) : MEMS  center
  • ECE Dept:
  • Mr. Kirmender Singh (Department co-ordinator) :Sr. Lecturer
  • Mrs. Shruti Kalra : Sr. Lecturer
  • Mr. Tanuj Chauhan: Sr. Lecturer
  • Department of Physics and Materials Science
  • Dr. R. K. Dwivedi (Co-ordinator) Associate Professor
  • Dr. Geetika Srivastava: Sr. Lecturer
  • Department of Biotechnology
  • Dr. Sudha Srivastava (Assistant Professor)

Events Talks delivered in the area of MEMS: 

  • Talk delivered at Bharti Vidyapeeth, New Delhi By Prof. A B Bhattacharayya
  • Talk delivered at STMicroelectronics Greater Noida By Prof. A B Bhattacharayya
  • Talk delivered at UP Technical University affiliated college, Ghaziabd  on By Prof. A B Bhattacharayya
  • Talk delivered at STMicroelectronics Greater Noida By Prof. A B Bhattacharayya

 People (linked to MEMS Design Center) Faculties (link to biography given next)

  • Prof. AB Bhattacharyya
  • Dr. R. K. Dwivedi,
  • Mr. Kirmender Singh
  • Mrs. Shruti Kalra
  • Mr. Tanuj  Chauhan
  • Dr. Sudha Srivastava
  • Dr. Geetika Srivastava
  • Dr. Poonam Goel

PROF. A . B. BHATTACHARYYA

  • Date of Birth : 19.12.1937
  • Educational Qualification : Ph.D(Physics/Radiocommunication), Banaras Hindu University,Varanasi, India(1961)
  • Post Doctoral Research : Moscow Power Institute ( 1964 – 1967 ) : Tunnel Diode – SCR High Speed Switching Circuits.
  • Employment:
  • Lecturer : Electrical Engg Deptt,Banaras Hindu University ( 1961 – 1967 ).
  • Assistant Professor : Indian Institute of Technology, Delhi (1967 – 1974 ).
  • Professor and Chairman : Centre For Applied Research in Electronics (CARE ), IIT,Delhi (1975 – 2008).Head – Care : 10 years
  • Dean: Industrial Research and Development , IIT, Delhi,(1994 – 1997 ).
  • Coordinator : Microelectronics Program : IIT, Delhi : ( 1974-1998 ).
  • Director : Institute of Technology and Management, Gurgaon ( 1998 – 2000 ).
  • Professor and Director : VLSI Program, Goa University,Goa ( 2000 – 2003 )
  • International :
  • University of Southampton( U.K. )-( 1971 – 1972 ),
  • University of Twente( The Netherlands )-( 1979 – 1980 ),
  • University of Rochester  -( 1987 – 1988 ),
  • University of California, Los Angeles( USA )-( 1999 ),
  • University of Pierre et Marie Curi, Paris( France ).
  • Current Affliation :
  • Emeritus Professor: Jaypee Institute of Information Technology, Noida (2004 – present).

(b)Project Director/Advisor : MEMS Design Centre, JIIT,( 2010 – present).

Research

  • Initiated and Coordinated research on wide range of issues on MOS Technology, Charge Coupled
  • Devices and SIMOX Based SOI Technology and devices.
  • Also credited to initiate research in India on SAW Analog Signal Processing circuits.
  • Since 1990,research focus centered on Low Power Analog CMOS Circuits with special reference to
  • portable Biomedical Chips such as Hearing Aids,pacemakers etc.
  • Current Interest: MOSFET Models for Analog Design,MEMS and Smart Sensor Design.
  • Research Publication: 155
  • Ph.D Supervision: 32
  • Book. Compact MOSFET Models for VLSI Design, John Wiley & IEEE ( 2009).
  • Professional :
  • (a) Fellow (One of The Founder Members): Indian National Academy of Engineering.
  • (b)Fellow: Indian National Science Academy
  • (c)Senior Member: IEEE
  • (d)Member MOS-AK International Compact Model Group
  • (e)Fellow: Institute of Electronics and Telecommunication Engineering( IETE ).

Awards:

  • Techno Visionary Award by Indian Semiconductor Association for Lifetime Contribution in Microelectronics ( 2009).
  • IIT – Delhi Platinum Jubilee Distinguished Service Award ,IIT – Delhi( 2011 ).
  • S.N.Mitra INAE Award :2005
  • National Khosla Award and Pasvik Award ( 1984 )
  • Vikram Sarabhai, Award,Basin Award ( 1980).

Dr. R. K. Dwivedi

Associate Professor
Email : rk.dwivedi@jiit.ac.in
Education

M.Tech. ,Ph.D.
NET  (UGC-CSIR) &  GATE

Biography

Dr. R.K. Dwivedi did his M.Sc. from Kanpur University followed by M.Tech. and Ph.D. in Materials Science and Technology from Institute of Technology,  Banaras Hindu University, Varanasi. After doing Ph.D., he has worked in the Department of Metallurgical Engineering and Materials Science, IIT Bombay as a Research Associate.  Dr. Dwivedi has been working in the field of synthesis and characterization of advance materials for last 15 years. He has published 17 papers in the peer reviewed international journals of Applied Sciences and Engineering along with few publications in national/international proceedings and more than 15 papers have been presented in national and international conferences. His research contribution includes a series on Valence Compensated Perovskite Oxides. Dr. Dwivedi has been given a best paper presentation award in VIIIth National Seminar on Ferroelectrics and Dielectrics in Oct. 1996. He has received life membership of Materials Research Society of India and short term membership of MRS Singapore. Dr. Dwivedi is, currently, working on several Gov. funded projects in JIIT.

Interest Area(s)

Electronic Ceramics, Multiferroics, Nano synthesis of Advance Materials, MEMS and Ferrite Technology

Publications : International Journal – 17 National Journal – 01 Conférences – 20

Mr. Kirmender Singh

EDUCATIONAL QUALIFICATION:

  • M.Tech in Microelectronics and Embedded Technology from JIIT  NOIDA with an aggregate of 83% .
  • B.E in ECE  from Sant Gadge Baba Amravati University with an aggregate of 70% .
  • XIIth from K.V. Delhi Cantt with aggregate of  67% marks .

WORK EXPERIENCE:

  • At “Elnova Electronics and Instruments Private Ltd”, Okhla Industrial Area, as a Design Engineer ,involved in design of power conditioning systems.
  • At “DCM Datamatics and Staffing Solutions”, NEPZ NOIDA, as a software Engineer, involved in  developing banking as well as insurance software solutions.
  • At “Krishna Institute of Engineering Technology”, Ghaziabad, taken classes of  B.Tech.
  • At “Jaypee Institute Of Information Technology (JIIT)”,  NOIDA , taking B.Tech and M.Tech Classes in  Electronics and  VLSI Design.

ACTVITIES INVOLVED:

  • Currently pursuing PhD under the Guidance of Prof. A.B.Bhattacharyya in the area of Analog CMOS design. The problem undertaken is development of advance procedural analog design tool i.e PAD in the framework of EKV Model.
  • Developed complete methodology of converting BSIM Model parameters to EKV Model parameters, the development of customized tool box for conversion with optimization is under progress.
  • Assistance in  proof reading of book titled “Compact MOS Model for VLSI Design” by Prof A.B.Bhattacharyya.
  • Member of NPMASS a program for MEMS sensor and its application run by Govt of INDIA.

PROFFESIONAL BODIES:

  •   Member IEEE.

 Mrs. Shruti Kalra

Date of Birth : 03/09/1983
Designation: .Sr. Lecturer
Institute/University: Jaypee Institute of Information Technology
Address: A-10, Sector-62, Noida (U.P.).PIN: 201307
Telephone: +91-120-2594324 Fax: +91-120-2400986.E-mail: shruti.sabharwal@jiit.ac.in
Number of Research projects being handled at present: none

Education (Post-Graduation onwards & Professional Career)

Sl No. Institution Place Degree Awarded Year Field of Study
1 Center for Development of Advanced Computing, (CDAC) M.Tech 2007 VLSI Design

Position and Employment (Starting with the most recent employment)

Sl No. Institution
Place		 Position From (Date) To (date)
1. Jaypee Institute of Information Technology Sr. Lecturer July 2010 Till Date
  Jaypee Institute of Information Technology Lecturer Aug 2008 June 2010
2. Center for Development of Advanced Computing Lecturer Aug 2007 July 2008
3. RF Silicon Intern July 2006 Jan 2007

Research Papers, Reports : 3

Selected peer-reviewed publications (Ten best publications in chronological order)

  • “An area efficient Implementation of Reed-Solomon Encoder for DVB-H Protocol”, S. Sabharwal, A. Noor. Proceedings of 2nd national conference of resent trends in information systems (RETIS-2008), Jadavpur University Calcutta held on 7-9 Feb 2008.
  • “Implementation of AHB Interface as SDR-SDRAM Controller’s CPU Interface”, proceedings of 2nd national conference, Sapna Gupta, Arti Noor, Shruti Sabharwal. INDIACom-2008, BVICAM-2008, Delhi held on 8-9 Feb 2008.
  • “Comparative Analysis of Subthreshold Leakage Reduction techniques using stack and VTCMOS technique” Syed Murtuza Hasnain, Nikhil Ahuja, Arti Noor, Shruti Sabharwal. Proceedings of National conference on modern trends in electronics and communication systems (MTECS-2008), AMU, Aligarh held on 8-9th March 2008.

Mr. Tanuj  Chauhan

Name Tanuj  Chauhan
E-Mail tanuj.chauhan@jiit.ac.in
Designation Sr. Lecturer
Educational Qualifications M T M (UNSW ,Sydney)
M. Engg. Science (UNSW, Sydney)
B.Tech. (Electronics and Instrumentation)
Other Qualifications Certification in Consulting Skills : Consultancy Development Centre, New Delhi (Ministry of Science &Tech)
Work Experience 2+ years in Academics
7months –Industry
Interest Area(s) Energy Harvesting , MEMS,VLSI ,Mixed Signal Design
Publications 1. Chauhan, T. & Bhagabati, C.D. & Kumar, V., 2011. Era of Energy Harvesting: µ -Energy Scavengers using Microsystems (MEMS) Technology. In: International Journal of Engineering Sciences and Management (ISSN No. 2231-3273), Vol. 1, Issue 1, pp 75-79.

Dr. Sudha Srivastava

Assistant Professor
Dept. of Biotechnology,JIIT, A-10, Sector -62,Noida 201307

E-mail : Sudha.srivastava@jiit.ac.in

Tel : (+91) -120-2594213 

Biography

Dr. Sudha Srivastava, Assistant  Professor, joined JIIT in 2004. Before joining JIIT, she was a consultant at Indira Gandhi National Open University (IGNOU) Delhi for the planning and development of Post Graduate Diploma Program in Bioinformatics. She did her post doctoral training  in molecular biology from All India Institute of Medical Sciences (AIIMS) with an independent DBT-Post Doctoral Fellowship(2002). At AIIMS she worked on structural analysis of domains of the non-structural proteins of Hepatitis E Virus.

She is an interdisciplinary person with Ph.D in Physical Sciences from Jawaharlal Nehru Universtiy(JNU), New Delhi (2002). She did her M.Phil., Msc(Hons) and B.Sc (Hons) in physical chemistry from  Panjab University Chandigarh (1988-1995). She received fellowships from Jawaharlal Nehru Memorial Fund Fellowship for Research (2000), CSIR-UGC NET & Junior Research Fellowship(1995). She had also qualified GATE (1994).

Her research interests include nanobiotechnolgy, biosensors, ligand-receptor interactions. Currently, in my laboratory we use nanotechnology for the development of biosensors with improved stability, sensitivity and response time. We also study the mechanism of interaction of sweet molecules with human taste receptor/s

Sponsored Project :

Title : “Designing a nanoparticle based glucose biosensor”

PI :  Dr. Sudha Srivastava

Sanctioned by: All India Council for Technical Education (AICTE)  (2009-12)

Patent Filed
Developed a process to make thermally stable enzyme nanoparticles (Patent Application No 2782/DEL/2010: Filing date: 2010-11-23)

PhD Thesis (Currently under supervision)

  • Investigating determinants of sweetness in sweet proteins/molecules.
  • Development of a nanoparticle based glucose biosensor

Dr. Geetika Srivastava

Lecturer Email : geetika.srivastava@jiit.ac.in

Education

M. Tech (SSEM) IIT Roorkee, Ph.D (Engg.) IISc Bangalore

Other Qualifications
CSIR-JRF Qualified
GATE Qualified

Biography

Dr. Geetika is a Lecturer in Department of Physics & Materials Science & Engineering. She completed her M.Tech in Solid State Electronic Materials (SSEM) from IIT Roorkee (2004) followed by Ph.D (Engg.) in Materials Science and Engineering from Materials Research Centre (MRC), IISc Bangalore in 2009. She got an EGIDE fellowship (from French Embassy) to carry out her experiments during her Ph. D tenure for four months in ICMCB, Bordeaux, France. She also worked as a Research Associate in IISc, Bangalore for 11 months before joining JIIT.

Interest Area(s)

Dielectric and ferroelectric materials

Dr. Poonam Goel
PhD, Indian Institute of Science, Bangalore
MTech, Panjab University, Chandigarh
BTech, Adesh Institute of Engineering and Technology, Faridkot

Research Areas:
Design, fabrication and Characterization of MEMS/ RF-MEMS devices.

PhD Students

Student Department Regular/Full-time Topics
Mr. Subhash Physics & Material Science Regular Synthesis and characterization of ferroelectric thin films for MEMS applications
Ms. Ragini Raghav Biotechnology Regular Development of immunobiosensor
Mr. Kirmender Singh Electronics & Communication Engineering Part-time CMOS based temperature sensor

M Tech Students 

Past Students

Student Department Program Session Topics
Mr. Vibhu Srivastava Electronics & Communication Engineering M.Tech 2009-2011  
Mr. Kshitiz Electronics & Communication Engineering M.Tech 2009-2011  
Mr. Piyush Jain Electronics & Communication Engineering M.Tech 2009-2011 To develop automation tool for BSIM3v3 to EKV conversion and validation with reference model BSIM

Present Students

Student Department Program Session Topics
Ms. Pallavi Tyagi Electronics & Communication Engineering M.Tech 2010- Modeling of RF MEMS transformers
Mr. Shivaji Tyagi Electronics & Communication Engineering M.Tech 2010- MOS-compatible micromechanical low frequency filter bank
Mr. Rashiya Sharma Physics & Material Science M.Tech 2010- Optimization of the design parameters of a piezoelectric actuator

B Tech Students Past Students

Student Department Program Session Topics
Mr. Ashish  Sharvana Electronics & Communication Engineering B.Tech 2010-  

Present Students

Student Department Program Session Topics
Mr. Ivneet Makkar Electronics & Communication Engineering B.Tech 2008-  
Mr. Abhinav Gaur Electronics & Communication Engineering B.Tech 2008- On-chip temperature sensor
Mr. Indranil Sen Electronics & Communication Engineering B.Tech 2008- SAW based temperature sensor using YZ-Lithium Niobate as substrate
Mr. Shishir Jain Electronics & Communication Engineering B.Tech 2008- SAW based temperature sensor using YZ-Lithium Niobate as substrate
Mr. Hari Ballabh Agrawal Electronics & Communication Engineering B.Tech 2008- Design of MEMS based capacitive pressure sensor using comb-drive structure
Mr. Gaurav Jain Electronics & Communication Engineering B.Tech 2008- Design of MEMS based capacitive pressure sensor using comb-drive structure
Ms. Pracheta Anand Biotechnology B.Tech 2008- Development of quartz crystal microbalance based immunobiosensor
Ms. Manisha Nassa Biotechnology B.Tech 2008- Development of quartz crystal microbalance based immunobiosensor

Publications :
Prof A B  Bhattacharyya  International Journal

  • Sharma, R., Chakravarty, T., and Bhattacharyya, A. B., “Analytical model for optimum signal integrity in PCB interconnects using ground tracks”, IEEE Transactions on Electromagnetic Compatibility, Vol. 51 (1), pp. 67-77, 2009. [[Impact Factor :  1.083, Indexed in SCOPUS]
  • Sharma, R., Chakravarty, T., and Bhattacharyya, A. B., “Analytical modelling of micro strip-like interconnections in presence of ground plane aperture”, IET Microwaves, Antennas and Propagation 3 (1), pp. 14-22, 2009. [Indexed in SCOPUS]
  • Sharma, R., Chakravarty, T., and Bhattacharyya, A.B., “Empirical expressions for characteristic impedance of modified microstrip-like interconnections “, in AEU - International Journal of Electronics and Communications , 2009. [Impact Factor :  0.371, Indexed in SCOPUS]
  • Sharma, R., Chakravarty, T., and Bhattacharyya A. B., “Transient Analysis of Microstrip-Like Interconnections Guarded by Ground Tracks,” Progress in Electromagnetic Research, vol. PIER 82, pp.189-202, 2008. [Impact Factor :  4.735, Indexed in SCOPUS]
  • Sharma, R., Chakravarty, T., and Bhattacharyya, A. B., “Signal Integrity Issues in High-Speed Interconnects over a Ground Plane Aperture,” Journal of Electromagnetic Waves and Applications, vol. 22, no. 16, pp. 2231-2240, 2008. [Impact Factor :  3.134]
  • Sharma, R., Chakravarty, T., and Bhattacharyya, A. B., “Transient Analysis of Microstrip-Like Interconnections Guarded by Ground Tracks,” Progress in Electromagnetic Research, vol. PIER 82, pp.189-202, 2008. [Impact Factor :  4.735]
  • Sharma R., Chakravarty T., Bhooshan S., and Bhattacharyya A. B., “Characteristic Impedance of a Microstrip-like Interconnect Line in Presence of Ground Plane Aperture”, International Journal of Microwave Science and Technology, vol. 2007, 5 pages, 2007.
  • Rohit Sharma, T. Chakravarty, Sunil Bhooshan and A. B. Bhattacharyya, “Minimization of Overshoots and Ringing in MCM Interconnections”, International Journal of Microwave and Optical Technology, vol. 2, no. 2, pp. 106-111, April 2007.
  • Sharma, R., Chakravarty, T., Bhooshan, S., and Bhattacharyya, A. B., “Design of a Novel 3dB Coupler using Defected Ground Structure”, Progress in Electromagnetic Research, vol. 65, pp. 261-273,2006. [Impact Factor : 4.735, Indexed in SCOPUS]
  • Tuli Suneet, Bhattacharyya A. B., and Forget Benoit C., and Fournier Daniele, “Mirage Effect  Based  Depth  Profiling  of Micromachined  Silicon  Structures” Sensors  & Actuators – A (Physical), Vol. 64, pp. 203-207, 1998. [Impact Factor : 1.724, Indexed in SCOPUS]
  • Forget B. C., Barbereau I., Fournier D., Tuli S., Bhattacharyya A. B., “Electronic Diffusivity Measurement in Silicon by Photothermal Microscopy”, Applied Physics Letters, vol. 69, pp. 1107-1109,  1996. [Impact Factor :  3.726, Indexed in SCOPUS]
  • Bhattacharyya A. B, Tuli Suneet and Majumdar Swati, “SPICE Simulation of Surface Acoustic Wave Interdigital Transducers”, IEEE Transactions on Ultrasonics. Ferroelectrics and Frequency Control, Vol. 42, No. 4, pp. 784-786, July 1995. [Impact Factor: 2.16, Indexed in SCOPUS]
  • Tuli S., Bhattacharyya A. B. and Fournier D., “Surface acoustic wave reflections from a proton exchanged dispersive dot array”, Applied Physics Letters, Vol. 67, pp. 1844-1846, 1995. [Impact Factor : 3.726, Indexed in SCOPUS]
  • Tuli Suneet and Bhattacharyya A. B., “Characteristics of Row Withdrawn Surface Acoustic Wve Reflection Dot Dispersive Delay Lines”, Microwave and Optical Technology Letters, pp. 605-607, Sept. 1994. [Impact Factor : 0.743, Indexed in SCOPUS]
  • Bhattacharyya A. B., Tuli Suneet, and Kataria Sunita, “An Automated non-Destructive Characterization system for Proelectric Materials”, IEEE Transaction on Instrumentation and Measurement, Vol. 43, No. 1, pp. 30-33, Feb. 1994. [Impact Factor :  0.978, Indexed in SCOPUS]
  • Tuli S. and Bhattacharyya A. B., “Determination of Depth of Proton Exchanged Layer in LiNb03 from Laser Induced Pyroelectric Signals”, Electronics Letters, Vol. 29, No. 8, pp. 708-710, 1993. [Impact Factor : 1.14, Indexed in SCOPUS]
  • Tuli S. and Bhattacharyya A. B., “Proton Exchanged Depth Determination in LiNb03 from Laser Induced Pyroelectric Voltage Measurements”, Applied Physics Letters, Vol. 63, pp. 273 8-2740, 1993. [Impact Factor : 3.726]
  • Bhattacharyya A. B. and Bandopadhyaya A., “Modelling three dimensional effects in CMOS Latch-up”, IEICI Transaction Electronics (Japan), Vol. E75-C, No. 8, pp. 943-952, 1992.
  • Mehta Rajesh, Bhattacharyya A. B., and Singh D. N., “Post growth process induced degradation in thin gate oxides”, Journal Applied Physics, Vol. 69, pp. 8247-8252, 1991. [Impact Factor : 2.201, Indexed in SCOPUS]
  • Aggarwal S. and Bhattacharyya A.  B., “Low Frequency Gain Enhanced CMOS Operational Amplifier”, IEE proceedings. Part G. Electronic circuits and systems, 138 (2), pp. 170-174, 1991. [ Indexed in SCOPUS]
  • Bhattacharyya A. B., “Delay time sensitivity in non-linear monotone RC trees”, IEEE Trans. on Computer Aided Design of Integrated Circuits, Vol. 9, No. 5, pp. 554-560, 1990. [ Impact Factor : 1.466]
  • Kumar Ramakant, Verma I. K., and Bhattacharyya A. B., “Effect of NaC104 on Properties of Poly-pyro-mellitimides”, Journal Electrochemical Society, Vol. 137, No. 7, pp. 2185-2189, 1990. [Impact Factor : 2.437]
  • Verma 1. K., Kumar Ramakant, and Bhattacharyya A. B., “Effect of structures on Properties of Aromatic Polymides”, Journal of Applied Polymer Science, Vol. 40, pp. 531-542, 1990. [Impact Factor :  1.187]
  • Panwar B. S. and Bhattacharyya A. B., “Rapid Termal Anneal of Hydrogen Implanted Metal-Silicon Nitride-SiliconDoxide-Silicon Structure”, Applied Physics Letters, Vol. 56, No. 14, pp. 1336-1338, 1990. [Impact Factor : 3.726]
  • Srivastava J. K., Agarwal L., Bhattacharyya ,A. B., “Electrical Characteristics of Lithium Soped ZnO Films”,Journal Electrochemical Society, Volo.36, N0. 11, pp. 3414-3417, 1989. [Impact Factor :  2.437]
  • Panwar B. S. and Bhattacharyya A. B., “Growth and Characterisation of ZnO Films Deposited on a Monolithic Si3N4-Si02 Configuration”, Thin Solid Films, pp. 291-305, 1989. [Impact Factor : 1.884]
  • Singh Rajinder and Bhattacharyya A. B., “Matching Properties of Linear MOS Capacitors”, IEEE Transaction on Circuits and Systems, Vol. 36, No. 3, pp. 465-467, 1989. [Impact Factor : 2.043, Indexed in SCOPUS]
  • Singh Rajinder and Bhattacharyya A. B., “Role of Comers in Matching of Linear MOS Capacitors”, IEEE Trans. on Circuits and systems, Vol. 36, No. 3, pp. 467-469, 1989. [Impact Factor : 2.043]
  • Bhattacharyya A. B. and Aggarwal S., “Variability Reduction in CMOS Operational Amplifier Through Layout Modification”, IEE Proc., Vol. 36, No. 2, pp. 79-83, April 1989. [Indexed in SCOPUS]
  • Singh Rajinder, Singh S.P., and Bhattacharyya A. B., “A Fast and Area Efficient BWC array A/D Conversion Sheme”, IEEE Trans. on Circuits and Systems, Vol. 36, pp. 912-916 1989. [Impact Factor : 2.043]
  • Singh Rajinder and Bhattacharyya A. B., “Performance Oriented Scaling Laws for Mixed Analog/Digital MOS Circuits”, Solid- State Electronics, Vol. 32, No. 10, pp. 835-838, 1989. [Impact Factor : 1.422, Indexed in SCOPUS]
  • Singh S. P., Prabhakar A., and Bhattacharyya A. B., “Design Methodolgoies for C-2C Ladder Based D/A Converters for PSM Codecs”, IEE Proc. Vol. 35, No. 4, pp. 133-140, 1988. [Indexed in SCOPUS]
  • Narayanan S., Bhattacharyya A. B, and Chandra S., “A Simple High Frequency Characterisation of a Three Phase CCD by Controlled  Three Phase Transfer”, Solid- State Electronics, Vol. 31, No. I, pp. 121-125, 1988. [Impact Factor : 1.422]
  • Aggarwal S., Bhattacharyya A. B., and Chandra S., “A Novel Two Dimensional MOS Transistor for Analogue Application”,Solid State Electronics, vol. 30, No. 12, p. 1323, 1987. [ Impact Factor : 1.422]
  • Jain N. K., Prasad V.C., and Bhattacharyya A. B., “Delay Time Sensitivity in Linear RC Tree”, IEEE Jour. Circuits and Systems, Vol. CAS-34, No. 4, pp. 443-445, 1987. [Impact Factor : 2.043, Indexed in SCOPUS]
  • Singh S. P., Prabhakar A., and Bhattacharyya A. B., “C-2C Ladder Based D/A converters for PCM codecs”,IEEE Jour. Solid- State Circuits, SC-22. pp. 1197- 1200, 1987. [Impact Factor : 3.466, Indexed in SCOPUS]
  • Shankaranaryan L. and Bhattacharyya A. B, “An extended operation of surface channel CCDs by controlled free charge transfer”, Solid -State Electronics, pp. 1897- 1900, 1986. [ Impact Factor : 1.422]
  • Panwar B. S., Bhattacharyya A. B., and Dieulesaint E., “Transmission line Approach for Computation of Static Capacitance of an IDT in Multilayer Media”, IEEE Trans. on Ultrasonic, Ferroelectrics and Frequency Control, UFFC, 33, No. 4, pp. 416-419, 1986. [ Impact Factor: 2.16]
  • Jain N. K., Visweswaran G.S., and Bhattacharyya A. B., “Time Domain Sensitivity Analysis of n-MOS Dynamic RAM”, IEEE Trans. on Circuits and System, Vol. CAS-33, pp. 77-82, 1986. [Impact Factor : 2.043, Indexed in SCOPUS]
  • Bhattacharyya A. B„ Ratnam P., Nagchoudhuri D, Rustagi S.C., “On line Extraction of Model Parameters of a Long Buried Channel MOSFET”, IEEE Trans. on Electron Devices, Vol. ED-32, pp. 545-550, 1985. [Impact Factor : 2.73, Indexed in SCOPUS]
  • Visweswaran G. S., Bhattacharyya A. B., and Jain N.K., “Quasi-Static Analysis of a Dynamic Sense Amplifier”,Electronics Letter, Vol. 21, pp. 331-332 1985. [Impact Factor : 1.14]
  • Bhattacharyya A. B. and Lakshmi E, “Passivation of Gallium Arsenide by Reactively Sputtered Gallium Nitride Thin Films”, Microelectronics Jour, Vol. 14, pp. 43-48, 1983. [ Impact Factor : 0.859, Indexed in SCOPUS]
  • Bhattacharyya A. B., “VLSI – The Technology Giant and the Developing Countries” (Invited paper), Proc. IEEE, Vol. 17, pp. 17-22, 1983. [Impact Factor = 4.613, Indexed in SCOPUS]
  • Agarwal J. P., Sudhakar P., and Bhattacharyya A. B., “Self Resonant IDT as a Grating Reflector of Ssurface Acoustic Waves”, Electronics Letters, Vol. 19, pp. 982-983,1983. [Impact Factor =1.14]
  • Bhattacharyya A. B. and Lakshmi E., “Modification of the transient capacitance analysis of GaAs MIS Structures for Minority Carrier Lifetime Determination”, Journal Applied Physics, Vol. 54. pp 2116-2118 1983.[Impact Factor : 2.201, Indexed in SCOPUS]
  • Lakshmi E. and Bhattacharyya A. B., “Interface-State Characteristics of GaN/GaAs MIS capacitors”, Solid- State Electronics, Vol. 25, pp. 811-815, 1982.  [Impact Factor : 1.422, Indexed in SCOPUS]
  • Singh S. P., Prabhakar A., and Bhattacharyya A. B., “C-2C Ladder Voltage Dividers for Applications in all-MOS A’D Converter”, Electronics Letters , Vol. 18, pp. 537-538, 1982. [Impact Factor : 1.14]
  • Bhattacharyya A. B., Manchanda L., and Vasi J., “Electron traps in Si02 grown in the presence of trichloroethylene”, Journal Electrochemical Society, Vol. 129, pp. 2772- 2778, 1982. [Impact Factor :  2.437]
  • Bhattacharyya A. B., and Wallinga H., “An area variable MOS varicap and its application in programmable tap weighing of CCD transversal filters”, IEEE Trans. on Electron Devices, Vol. I, ED-29, pp. 827-833, 1982.[Impact Factor : 2.73]
  • Ratnam P. and Bhattacharyya A. B., “Accumulation punch through mode of operation of Burned-channel MOSFETs”, IEEE Electron Devices Letters, VOL.EDL-3, pp. 203-204, 1982.
  • Bhattacharyya A.  B.,  Wallinga  H.,  Lakshminarayanan  S.,  Kapoor  N., “Performance of an Area Variable MOS Varicap-weighted Programmable CCD filter”, Electronics Letters, Vol. 17, pp. 467-468, 1981. [Impact Factor : 1.14, Indexed in SCOPUS]
  • Manchanda L., Vasi J, and Bhattacharyya A. B., “The Nature of Hole Traps in Thermal Silicon Dioxide”,Journal Applied Physics, 52. pp. 4690-4696, 1981. [ Impact Factor : 2.201, Indexed in SCOPUS]
  • Manchanda L., Vasi J., and Bhattacharyya A. B., “Hole Traps in Thermal Silicon Dioxide Introduced by Chlorine”, Applied Physics Letters, Vol. 37, pp. 744-747, 1980.[Impact Factor :  3.726, Indexed in SCOPUS]
  • Manchanda L., J.Vasi., and Bhattacharyya A.B., “The Effect of High Temperature Annealing of the Spatial Variation of Bulk Life-time Near the Si-Si02 Interface”, Solid- State Electronics, Vol. 23, pp. 1015-1020, 1980.[Impact Factor : 1.422]
  • Bhattacharyya A. B. and Ratnam P., “Fabrication and Characteristics of Autodoped Depletion VMOSTs”,Solid- State Electronics, Vol. 23, pp. 1094-1097, 1980. [Impact Factor : 1.422]
  • Lakshmi E., Mathur B., and Bhattacharyya A. B. “The Growth of Highly Resistive Gallium Nitride Films”, Thin Solid film, Vol. 74, pp. 77-82, 1980. [Impact Factor : 1.884,Indexed in SCOPUS]
  • Manchanda Lalita, Vasi J., Bhattacharyya A. B., “Determination of Surface State Distribution from Pulsed MOS Capacitor Transients”, Solid- State Electronics, Vol. 22, pp. 29-32, 1979. [Impact Factor : 1.422, Indexed in SCOPUS]
  • Bhattacharyya A. B., Nahar R.K., and Nagchoudhuri D., “Electrical properties of CdS-Si02-Si Structure”,Journal Applied Physics, Vol. 50, pp. 390-393, 1979. [Impact Factor : 2.201]
  • Sudhakar P. and Bhattacharyya A. B., “Model of SAW scattering and its application to SAW track changer”, Microwave Optics and Acoustics, Vol. 3, pp. 128-132, 1979.
  • Bhattacharyya A. B., Jindal S., Shankar S., “Current gain variability in Normal and I^2L Bipolar Transistors”,IEE Journal Solid State and Electron Devices, Vol. 3, pp. 107-116, 1979. [Indexed in SCOPUS]
  • Srivastava A. and Bhattacharyya A. B., “Determination of base recombination lifetime and surface recombination velocity at N-N+ interface of epitaxial transistors”, Solid- State Electronics, Vol. 21- pp. 1089-1090, 1978. [Impact Factor : 1.422, Indexed in SCOPUS]
  • Dutta Roy S. C., Bhattacharyya A. B., Vasi J., Das V.G., Shankar L., Kapoor Navin, “Signal Processing Applications of Charge coupled Devices”,, Journal Institute Electron Telecommunication Engineering, Vol.24,  pp. 400-418, 1978. . [Indexed in SCOPUS]
  • Bhattacharyya A. B., Basavaraj T. N., “Approximation to the Impurity Distribution from a Two- step Diffusion process”, IEEE Trans. on Electron Devices, pp. 509, 1978. [Impact Factor : 2.73]
  • Kumar U, and Bhattacharyya A. B., “Modified charge-Control Model for MOS Transistors”, Solid- State Electronics, Vol. 21, pp. 593-594, 1978. [Impact Factor : 1.422, Indexed in SCOPUS]
  • Sudhakar P., Bhattacharyya A. B., and Mathur B., “Harmonic Response of Normal and Rare Interdigital Surface-Acoustic Wave Transducers with Arbitrary Metallisation Ratios”, IEE Journal of Microwave Optics and acoustics, Vol. 2, No. 3, pp. 65-70, 1978. [Indexed in SCOPUS]
  • Jindal S. and Bhattacharyya A. B., “Two Dimensional Analysis of Breakdown in Epitaxial Planar Junctions”,IEE Journal on Solid- State and Electron Devices, Vol. 2, No. 4, pp. 109- 111, 1978. [Indexed in SCOPUS]
  • Sudhakar P., Bhattacharyya A. B., Mathur Bimal, “SAW Bandpass Filter with 50dB Side-lobes using Unweighed IDTs”, Electronics Letters, Vol. 14, No. 14, p. 437, 1978. [ Impact Factor : 1.14]
  • Kumar R. and Bhattacharyya A. B., “Variability Study and Design Considerations of p-n junction Hyperabrupt Varactor Diodes”, IEEE Transaction on Electron Devices, Vol. ED-24, No. 10, p. 1270-1272, 1977. [ Impact Factor : 2.73]
  • Bhattacharyya A. B., Jindal S., and Basavaraj T. N., “Collector Junction Modelling of Planar Transistors”, Solid -State Electronics,Vol. 20, pp. 977-984, 1977. [ Impact Factor : 1.422, Indexed in SCOPUS]
  • Bhattacharyya A. B., Nahar R.K., and Nagchoudhuri D., “The Stability of Ohmic Contacts to CdS Films”,Journal Applied Physics, Vol. 10, pp. 245-246, 1977.[Impact Factor : 2.201, Indexed in SCOPUS]
  • Bhattacharyya A. B. and Kumar Rajendra, “Avalanche Breakdown Characteristics of Punch Through Diodes”,IEEE Transaction on Electron Devices, Vol. ED-23, No. 9, pp. 1016-1023, 1976. [Impact Factor : 2.73]
  • Kumar Rajendra, Bhattacharyya A. B., “Variability Study and Design Consideration of Hyperobrupt Junction Voltage Variable Capacitors”, Solid- State Electronics, Vol. 19, pp. 519-525, 1976. [Impact Factor : 1.422, Indexed in SCOPUS]
  • Kumar Rajendra, Bhattacharyya A. B., and Jindal Subodh, “Breakdown and Capacitance Properties of Hyper abrupt Epitaxial Schottky Barrier Diodes”, Solid State Electronics, Vol. 18, pp. 999-1004, 1975.  [Impact Factor : 1.422 , Indexed in SCOPUS]
  • Bhattacharyya A. B., Srivastava A., and Kumar R., “Switching Properties of Epitaxial Planar Transistors Operating in Saturation”, Solid- State Electronics, Vol. 18, pp. 277-286, 1975.[Impact Factor : 1.422]
  • Basavaraj T. N. and Bhattacharyya A. B., “Depletion Layer Characteristic of Single Diffused p-n Junction”,Solid State Electronics, Vol. 17, pp. 765-767, 1974. [ Impact Factor : 1.422, Indexed in SCOPUS]
  • Basavaraj T. N. and Bhattacharyya A. B., “Comments on Peripheral and Diffused Layer Effects on Doping Profiles”, IEEE Trans. on Electron Devices, ED-21 pp. 125-126, 1974. [Impact Factor : 2.73, Indexed in SCOPUS]
  • Bhattacharyya A. B., and Gupta M. L., “Single-section Lumped Model in Resistors”, Solid- State Electronics,Vol. 16, pp. 1506, 1973. [Impact Factor : 1.422, Indexed in SCOPUS]
  • Basavaraj T. N. and Bhattacharyya A. B., “The Effect of Retarding Field on the Transport Characteristics of Planar Transistors”, Solid- State Electronics, Vol. 16, pp. 921-929, 1973. . [Impact Factor : 1.422, Indexed in SCOPUS]
  • Bhattacharyya A. B., “Transition Capacitance Calculations for Double-Diffused p-n Jnction”, Solid-State Electronics. Vol. 16, p. 467-476, 1973. [Impact Factor : 1.422, Indexed in SCOPUS]
  • Gupta M. L. and Bhattacharyya A. B., “Effect of Lateral Diffusion on Planer Resistor”, Solid-State Electronics, Vol. 16, pp. 281-283, 1973. [Impact Factor : 1.422]
  • Bhattacharyya A.B. and Gupta M. L., “An RC notch filter with distributed. Shunt resistances”, Proceedings of the IEEE, Vol. 61, July 1973. [Impact Factor : 4.613, Indexed in SCOPUS]
  • Bhattacharyya A. B and Basavaraj T. N., “Comments on an experimental electronic field gradient theory for diffused semiconductor”, Solid-State Electronics, Vol. 15, pp 947- 948,1972. [Impact Factor : 1.422, Indexed in SCOPUS]
  • Bhattacharyya A. B., Sarnot S. L., “Threshold behaviour of tunnel triggers for linearly varying input pulses”,Proceedings of the IEEE, Vol. 60, pp. 462-463, 1972. [Impact Factor : 4.613]
  • Sarnot S. L., Gupta M. L., Srivastava A. & Bhattacharyya A. B., “Tunnel-Diode-transistor binary counter”,Proceedings of the IEEE, Vol. 60, pp. 461-462, 1972. [Impact Factor : 4.613, Indexed in SCOPUS]
  • Bhattacharyya A. B. and Basavaraj T. N., “Effects of Impurity Deionization and Temperature Equivalent Life-time in Diffused Semiconductor Sructures”, Journal Applied Physics, Vol. 43 No. 3, pp. 1050-1055, 1972.[Impact Factor : 2.201]
  • Sarnot S. L. and Bhattacharyya A. B., “Non regenerative delay in tunnel diode switching”, Solid -State Electronics, Vol. 11, pp. 327-335, 1971. [ Impact Factor : 1.422, Indexed in SCOPUS]
  • Bhattacharyya A. B., “Admittance characteristics of a p-n junction diode with narrow diffused region”, Solid- State Electronics. Vol. 14, pp. 1113, Nov. 1971. [Impact Factor : 1.422, Indexed in SCOPUS]
  • Bhattacharyya A. B. and Sarnot S. L., “Analysis of tunnel diode monostable multivibrators”, Proceedings of the IEEE. Vol. 59, pp. 810-812, May 1971.  [Impact Factor :  4.613, Indexed in SCOPUS]
  • Bhattacharyya A. B., Tagore A. K., Basavaraj T. N., “Silicon p-n junction photodiode characteristics with variable drift field in the diffused region”, Electronics Letters, Vol. 7, pp. 231-233, 1971. [Impact Factor : 1.14, Indexed in SCOPUS]
  • Bhattacharyya A. B„ Sarnot S. L., “Dynamic performance of tunnel diode trigger with nonlinear”, Electronics Letters, Vol. 7, No. 16, pp. 4-6, 1971. [Impact Factor : 1.14, Indexed in SCOPUS]
  • Bhattacharyya A. B, Gupta M. L., Garg V. K., “Temperature coefficient calculations for monolithic resistors”,Microelectronics Reliability. Vol. 9, pp. 349-355, 1970. [Indexed in SCOPUS]
  • Bhattacharyya A. B., “Tunnel diode transient analysis with a nonlinear load”, Proceedings of the IEEE (Letters), Vol. 58, pp. 946-947, 1970. [Impact Factor :  4.613, Indexed in SCOPUS]
  • Bhattacharyya A.B. and Sarnot S.L., ‘Switching time analysis is backward diodes”, Proceedings of the IEEE, pp. 275-277, 1970. [Impact Factor :  4.613, Indexed in SCOPUS]
  • Gupta M. L., Bhattacharyya A. B., “Analytic evaluation of diffused impurity layers in a silicon”, Electronics Letters, Vol. 6, pp. 291-292, 1970. [Impact Factor : 1.14, Indexed in SCOPUS]
  • Bhattacharyya A. B., Gupta M. L, “Transient response of a p-n junction capacitor to a ramp signal”, Electronics Letter Vol. 6, pp. 508-509, 1970. [Impact Factor : 1.14, Indexed in SCOPUS]
  • Sarnot S. L. and Bhattacharyya A. B„ “On the use of a Backward diode in pulse shaping circuit”, Proceedings IEEE (Letters), Vol. 58, pp. 1376, 1970.[ Impact Factor :  4.613]
  • Sarnot S. L. and Bhattacharyya A. B., “Transient response of a tunnel diode trigger for linearly-varying current pulses”, Electronics Letters. Vol. 6, pp. 445, 1970. [Impact Factor : 1.14, Indexed in SCOPUS]
  • Bhattacharyya A. B. and Sarnot S. L., “Effect of the Junction capacitance variation and a small inductance on the switching time of a tunnel diode”, Proceedings of the IEEE (Letters), 58, pp. 1957-1959, 1970. [Impact Factor :  4.613]
  • Gupta M. L. and Bhattacharyya A. B., “Resistivity calculations for inhomogeneously doped germanium”, Electronics Letters. Vol. 6, pp. 817-818, 1970. [Impact Factor : 1.14]
  • Gupta M. L. and Bhattacharyya A. B., “Bias dependent transient response of p-n junction capacitor”.Electronics Letters, Vol. 6, pp. 784-786, 1970. [Impact Factor : 1.14]
  • Gangadhar R. B. and Bhattacharyya A. B, “On the transport characteristic of a p-n junction with narrow diffused region”. Solid- State Electronics. Vol. 12, pp. 887-891, Nov. 1969. [Impact Factor : 1.422, Indexed in SCOPUS]
  • Bhattacharyya A.B. and Sarnot S.I.., “Step response of a Bistable tunnel diode bistable trigger”, International Journal of Electronics, Vol. 27, No. 6, pp. 527-534. Dec. 1969. [ Impact Factor : 0.567]
  • Sarnot S. L. and Bhattacharyya A.B., “Tunnel diode transient analysis”, Electronic Letters, Vol. 5, pp. 275-277, Jan. 1969. [Impact Factor : 1.14]
  • Gangadhar R.B. and Bhattacharyya A.B. “Drift field photovoltaic cell performance with bulk and surface recombination”, International Journal of Electronics, Vol. 25, pp. 17-26, July 1968. [ Impact Factor : 0.567]
  • Bhattacharyya A.B., “The tunnel diode pair characteristics and some applications’, Soviet Radio Eng., Vol. 4, pp. 436-441, (In Russian), 1966.
  • Bhattacharyya A.B., “Admittance parameter of a general network”, Electronic Engg., Vol. 36. pp. 287, Dec. 1964.
  • Bhattacharyya A.B. and Chattopadhyay S.K., “Variable frequency transistorised three phase oscillator”, Journal of Scientific and Industrial Research,  Vol. WID, No. 5, pp. 162, 1962. .[ Impact Factor : 0.387]
  • Banerjee S.S. and Bhattacharyya A.B., “Electronic wattmeters for the measurement of high power”, Journal Scientific and Industrial Research, Vol. 20 A, 5, pp. 265-270, 1961. .[ Impact Factor : 0.387]
  • Bhattacharyya A.B., “Matching of valves in push pull arrangement used in electronic watt meters”, Journal Scientific and Industrial Research, Vol. 19 A, No. 6, pp. 260, 1960.[ Impact Factor : 0.387]

National Journal

  • Bhattacharyya A. B., “Microsystems on Silicon-A Revolution on Grains of Sand. Annals of Engineering”,National Academy of Engineering (India), Vol. iv, pp. 13—18, 2007.
  • Bhattacharyya A. B., Bandopadhyaya A., and Zarabi M.J., “Latch-up prevention in CMOS by substrate bias and double diffused drain technology”, Journal of Institution of Telecommunication Engineering, Vol. 36, No. 3, pp. 189-194, 1990.
  • Bhattacharyya A. B., “Microelectronics technology status at Indian Institute of Technology, Delhi”, IETE Technical Review, Vol. 7, No. 5&6, pp. 299-304, 1990.
  • Bhattacharyya A. B., Manchanda L, and Vasi J., “Effect of Trichloroethylele TCE Molar Concentrations on the Storage Time of MOS Capacitors”, Indian Journal of Applied Physics, Vol. 21, pp. 1-5, 1983.
  • Bhattacharyya A. B., Chandra Sudhir, and Nagchoudhuri D., “Physical and electrical properties of RF plasma grown AL2O3 and ALN insulators on silicon”, Jour. IETE, Vol. 26, pp. 110-116, 1980.
  • Bhattacharyya A.B., “Three phase transistorised oscillator”, Journal of Institute of Engineering (India), Vol. XLIII, No. part ETI, P.1, 1962.

International Conference 

  • Chandra N., Yati A.K., and Bhattacharyya A.B, “Extended-Sakurai-Newton MOSFET model for ultra-deep-submicrometer CMOS digital design “, Proceedings: 2009 22nd International Conference on VLSI Design – Held Jointly with 7th International Conference on Embedded Systems, art. no. 4749682, pp. 247-252, 2009.[Indexed in SCOPUS, DBLP]
  • Sharma R., Chakravarty T., and Bhattacharyya A. B., Characteristics of Microstrip-like Interconnections  guarded by Ground tracks, Proc. 29th URSI General Assembly, Chicago, 2008.
  • Sharma, R., and Bhattacharyya, A. B., “Delay Modeling of High-Speed Interconnects with Shield Insertion,”Proceedings of the IEEE Mini Colloquia, Jan. 2008.
  • Sharma, R., Chakravarty, T., and Bhattacharyya, A. B., “Closed-Form Expressions for Extraction of Capacitances in Multilayer VLSI Interconnects,” 21st IEEE International Conference on VLSI Design, Hyderabad, Jan. 2008.
  • Sharma, R., Chakravarty, T., Navadha, Khimta T., Raghuvanshi V., and Bhattacharyya A. B., “Design of a Microstrip Coupler with Ground Plane Aperture for Broadband Operation”, Proceedings of IEEE INDICON Conference, September 2007.
  • Sharma, R., Chakravarty, T., and Bhattacharyya A. B, “Transient Analysis of Microstrip – like Interconnects with Ground Plane Aperture”, Proceedings of the IEEE Applied Electromagnetic Conference, December 2007.
  • Sharma, R., and Bhattacharyya, A. B., “RLC Trees Revisited,” in Proceedings of the 4th IASTED International Conference on Circuits, Signals, and Systems, November 2006.
  • Bhattacharyya, A. B., “Tutorial: Compact MOSFET models for low power analog CMOS design”, in   Proceedings of the IEEE International Conference on VLSI Design, pp.15, 2005.[Indexed in SCOPUS]
  • Dessai G., Bhattacharyya A. B., Sharma S., Saha C., Singh A., and Singh D. N., “Temperature Dependence of Compact Alpha Power Model Parameter”, Proceedings of International Workshop on Physics of Semiconductor Devices, pp. 1082-1085, New Delhi, 2005.
  • Bhattacharyya A. B., and Ulman S., “PREDICTMOS MOSFET Model and its Application to Submicron CMOS Inverter Delay Analysis”, IEEE VLSI Design Conference, pp. 207-212, 2002. [Indexed in DBLP]
  • Bhattacharyya, A.B., Dey, S.” Sub-circuit analysis for Power Supply Rejection Ratio in Regulated Cascode Operational Transconductance Amplifiers and filters ”, Proceedings of the IEEE International Conference on VLSI Design, pp. 164-168, 1999.[Indexed in SCOPUS]
  • Bhattacharyya A. B., Rana R. S., Guha S. K., Bahl R., Anand Sureh, Zarabi M. J. et. al., “A Micropower Analog Hearing Aid on low voltage CMOS digital process”. Proceedings of the IEEE Conference on VLSI Design, (Bangalore), pp. 85-89, 1996. [Indexed in SCOPUS, DBLP]
  • Bhattacharyya A. B., Foumier D., Tuli S., Forget B. C., “Non-destructive Photothermal, Photoreflectance and Photoacoustic Techniques for the Characterisation of Semiconductor Materials and Devices”, Proceedings International Workshop on Physics of Semiconductor Devices, (N. Delhi), pp. 253-260, 1996.
  • Bhattacharyya A. B., Singh D. N., Mehta R., and Goswami L, “VMESS: VLSI Mechanical Stress Simulator. Proceedings of 511”, International Symposium on the Physical and Failure Analysis of Integrated Circuits(Singapore), pp. 200-205, 1995. [Indexed in SCOPUS]
  • Bandopadhyaya A., Verma P.  R., Bhattacharyya A. B., and Zarabi M.  J., “LATCHSIM – A Latch up Simulator in VLSI CAD Environment for CMOS and BiCMOS Circuits”, IEEE Int. conference on VLSI Design, pp. 339-342, 1994.[Indexed in SCOPUS, DBLP]
  • Bandopadhyaya A., Bhattacharyya A. B., Verma P. R., Kumar R., and Zarabi M. J., “Early voltage of parasitic lateral bipolar transistor and its effect on latch-up behaviour in VLSI CMOS technology”, International workshop a Physics of Semiconductor Devices, (N. Delhi), pp. 68-70, 1993.
  • Bhattacharyya A. B., Chandra S., Chand A., and Rustagi S. C., “Polysilicon SOI MOSFETs Using Rapid Thermal Polyoxide as Gate Dielectric”, Proceedings of the First Symposium on Thin Film Transistor Technology, Edt. Y.Kuo, Dielectric Science and Technology and Electronics Division, The Electrochemical Society, Vol. 92-94, pp. 225-234, 1992.
  • Bhattacharyya A. B., Chandra Sudhir, Amichand, and Rustagi S. C., “Polysilicon SOI MOSFETs Using Rapid Thermal Ppolyoxide as Gate Dielectric”, Proceedings Journal Electrochemical Society Fall meeting, Toronto, pp 460-461, Toronto, 1992.
  • Amichand, Chandra S., Rustagi S. C., and Bhattacharyya A. B., “Rapid Thermal Processing for Improved Polysilicon SOI NMOSFETs”, Proceedings IEEE International SOI conference, Florida, pp. 92-93, 1992.
  • Sridhar V., Guha Sujoy K., Anand Sneh, Bhattacharyya A.  B., and Ghosh P., “Biotechnological study of an extra-cochlear prosthesis”. Proceedings of the 14th Annual International Conference of the-IEEE Engineering in Medicine and Biology Society, Paris, pp. 1680-1681, 1992.
  • Rana R.  S. and Bhattacharyya A.  B., “CPAZ Pole zero computation using the Generalised Eigen Problem Approach”, Proceedings of International Conf. on VLSI Design, pp. 277-280, Bangalore, 1991.
  • Jain N.  K., Prasad V.  C. and Bhattacharyya A.  B., “Signal delay in linear RC mesh/tree”, IEEE International Conference on VLSI Design, N. Delhi, 1991.
  • Bhattacharyya A. B., Mehta Rajesh, and Singh D. N., “Process induced mechanical stresses and MOSFET hot electron degradation”.International workshop on Physics of Semiconductor Devices, Proc. IWPSD-91, pp. 201-206, 1991.
  • Bhattacharyya A. B., Rustagi S. C., and Anand Pooja, “C-V Simulation of Two Terminal SOI MOS Structures”, International workshop on Physics of Semiconductor Devices, Proc. IWPSD-91, pp.628-630. 1991.
  • Amichand, Rustagi S. C., Chandra S., and Bhattacharyya A. B., “Effect of post-metal annealing on rapid thermal oxides for VLSI application”, International workshop on Physics of Semiconductor Devices, Proc. IWPSD-91, pp. 528-530, 1991.
  • Bhattacharyya A.  B. and Bandopadhyaya A., “Physical Modelling of latch-up in CMOS Devices”, (Invited Paper), International workshop in physics of Semiconductor Devices, New Delhi, 1989.
  • Bhattacharyya A. B. and Singh Rajinder, “Performance oriented scaling laws for CMOS analog circuits”, IEEE workshop on analog circuits, Colorado, 1988.
  • Panwar B. S., Chandra S., and Bhattacharyya A. B. “Comparison and Evaluation of Radiation Damages in MZOS and MZNOS SAW Monolithic Structures, IEEE Sonic and Ultrasonic Symposium, (Williamsburg, USA), 1986. [Indexed in Scopus]
  • Bhattacharyya A. B., Panwar B. S., and Chandra S. “A New Structure for Monolithic SAW Configurations”,Symposium on Surface Waves in Solids and Layered Structures, Moscow, July 1-4, 1986.
  • Bhattacharyya A. B. and Panwar B. S., “Computation of VLSI interconnect capacitances”, (Invited paper), Proc. International conference on Physics of Semiconductor Devices, New Delhi, pp. 106-111, 1983.
  • Bhattacharyya A. B., “Hot electron trapping in Si02 and its effect on the reliability of VLSI”, (Invited paper),Proceedings of the International workshop on Physics of Semiconductor Devices, N. Delhi, p. 222, 1981.
  • Bhattacharyya A. B. & Sudhakar P., “A Superposition Model for Surface Acoustic Wave Multistrip Coupler”,IEEE Ultrasonic Symposium Proceedings, pp. 537-40, 1980. [Indexed in SCOPUS]
  • Bhattacharyya A. B. & Shankara Narayan L., “Characterization of CCD in Presence of Back Flow”, Proceedings of the 5th International Conference in CCD, Edinburgh (U.K.), pp.  402-407, 1979.

National Conference

  • Chand A., Chandra S., Rustagi S. C., and Bhattacharyya A. B., “Synthesis of SIMOX Substrate for CMOS Technology”, Seminar on Physics and Technology of Semiconductor Devices, CEERI Pilani, Sept.21-22, 1992.
  • Bhattacharyya A. B., Chandra S.,  Chand A., and Rustagi S. C.,”Development of High Performance Polysilicon Thin Film MOSFETs”,  Seminar on Physics and Technology of Semiconductor Devices, CEERI Pilani, Sept.21-22, 1992.
  • Chand A., Chandra S., and Bhattacharyya A. B, “Oxygen Ion Implantation Using Freeman Ion Source: A Case Study”, National Workshop on Ion Implanter Technology, Bangalore, March 1991.

Book

  • Bhattacharyya A.B, “Compact MOSFET Model for VLSI Design”, John Wiley & Sons and IEEE Press. ISBN 978-0-470-82342-2, 2009.

Prof  R.K. Dwivedi Publication International Journals

  • Vijayeta Pal, R.K. Dwivedi and O.P. Thakur, Ferroelectric behavior in  (BI1-xLax)0.50Na0.50TiO3 ceramics, (AIP Conference Series -2011)
  • Pawan Kumar, R. Prasad, R.K. Dwivedi and H.K. Singh,  Out of plane low field anisotropic Magneto resistance in Nd0.51Sr0.49MnO3 thin films, Journal of Magnetism and Magnetic Materials, (In Press)
  • Kumar Pawan, Dwivedi R.K., Prasad R., Siwach P.K. and Singh H.K., “Magneto-transport properties of La0.80Sr0.20Mn1-xCuxO3 thin films fabricated by SprayPyrolysis”, J. Korean Physical Society, Vol.1, 2011[Impact Factor: 1.204]
  • Dwivedi R.K., Kumar P.and Mishra S.K.,“Nano synthesis of lead doped neodymium manganite powder and characterization”, Synthesis and Reactivity in Inorganic, Metal-Organic, and Nano-Metal Chemistry,  vol 37,  pp 443-446, 2007, [Indexed in SCOPUS, Impact factor: 0.735].
  • Parkash Om,Kumar Devendra, Dwivedi R.K., Singh P. and Srivastav K.K. “Effect of simultaneous substitution of La and Mn on dielectric behavior of BaTiO3” J. Mat. Sci. vol 42[14], pp 5490-5496, 2007[Indexed in SCOPUS, Impact factor: 1.185, Cited by 02].
  • Dwivedi R. K., Kumar Devendra and Parkash Om, “Ferroelectric transitions in valance compensated Ba1-xLaxTi1-xCrxO3 ceramics” J. Mat. Sci. Vol 42 [1], pp 72-79, 2007 [Indexed in SCOPUS, Impact factor: 1.185].
  • Dwivedi R.K., Raj Raghvendra, Nigam A.K. and Bahadur D., “Low temperature synthesis and magneto-electrical studies in Nd1-xPbxMnO3 system”, J. Mat. Sci., vol 40, p-4801, 2005 [Indexed in SCOPUS, Impact factor: 1.185, Cited by 02].
  • Srivastava C.M., Dwivedi R.K., Nigam A.K. and Bahadur D., “Effect of cr substitution on transport and magnetic ordering in Nd0.50Sr0.50MnO3”,  J. Magnetism and Magnetic Materials, vol 284, p- 239-252, 2004 [Indexed in SCOPUS, Impact factor: 1.283, Cited by 04].
  • Dwivedi R.K., Kumar Devendra and Parkash Om, “Grain and grainboundary relaxation in Sr1-xLaxTi1-xCrxO3 ceramics: Impedance and modulus spectroscopy”, British Ceramic Transactions, vol 102, pp 1-8, 2003 [Indexed in SCOPUS, Impact factor: 0.524, Cited by 01].
  • Dwivedi R.K., Nigam A.K. and Bahadur D., “Magnetic instability in Nd0.50Sr0.50Mn1-xCrxO3 system”, National seminar on “Research in Advanced Inorganic Materials ( RAIM-02), IITB Mumbai, Dec., 2002.
  • Parkash Om, Kumar Devendra, Srivastav K.K. and Dwivedi R.K., “Electrical conduction behaviour of cobalt doped BaSnO3”, J. Mat. Sci.,  vol 36 [24] pp 5805-5810, 2001 [Indexed in SCOPUS, Impact factor: 1.185,Cited by 08].
  • Dwivedi R.K., Kumar Devendra and Parkash Om, “Structure and dielectric behaviour of valence compensated oxide, Sr1-xLaxTi1-xCrxO3 ceramics”, British Ceramics Transaction, vol 100, pp 115-119, 2001 [Indexed in SCOPUS, Impact factor: 0.524, Cited by 02].
  • Gautam C.R., Dwivedi R.K., Kumar Devendra and Parkash Om, “Synthesis and electrical conduction behaviour of strontium yttrium titanate cobalt oxide (Sr1-xYxTi1-xCoxO3, 0.01 £ x £ 0.10)”, Materials Letters, vol 50, pp 254-258, 2001 [Indexed in SCOPUS, Impact factor: 1.625, Cited by 01].
  • R.K. Dwivedi, Devendra Kumar and Om Parkash,  “Valence compensated perovskite oxide system Ca1-xLaxTi1-xCrxO3 – I: Structure and dielectric behaviour”, J. Mat. Sci., vol 36 [15], pp 3641-48,2001 [Indexed in SCOPUS, Impact factor: 1.185, Cited by  07).
  • Dwivedi R.K., Kumar Devendra and Parkash Om, “Valence compensated perovskite oxide system Ca1-xLaxTi1-xCrxO3 – II: Electrical transport behaviour”,J. Mat. Sci., vol 36 [15], pp 3649-55, 2001 [Indexed in SCOPUS, Impact factor: 1.185, Cited by 03].
  • Dwivedi R.K., Kumar Devendra and Parkash Om, “Valence compensated perovskite oxide system Ca1-xLaxTi1-xCrxO3 – III: Impedance spectroscopy”, J. Mat. Sci., vol 36 [15], pp 3657-65, 2001 [Indexed in SCOPUS, Impact factor: 1.185, Cited by 03.
  • Dwivedi R.K., Kumar Devendra, Parkash Om, Pandey L. and Srivastav K.K. “Effect of processing route on dielectric behaviour of valence compensated Sr0.50Ca0.15La0.35Ti0.65Co0.35O3 ceramics” Ceramic International, vol 26 p-13, 2000 [Indexed in SCOPUS, Impact factor: 1.360, Cited by 01].
  • Dwivedi R.K., Kumar Devendra and Parkash Om “Dielectric relaxation in valence compensated solid solution Sr0.65La0.35Ti0.65Co0.35O3”J. Phys. D: App. Phys., vol- 33, p – 88, 2000 [Indexed in SCOPUS, Impact factor: 2.104, Cited by 15].
  • Dwivedi R.K., Christopher C.C., Parkash Om, Kumar Devendra and Pandey L. “Effect of processing route and parameters on dielectric properties of valence compensated Sr0.65La0.35Ti0.65Co0.35O3” J. Mat. Sci. Lett., vol 15 p-1867,1996.

International Conferences

  • Dwivedi R.K., Baboo S., Kumar Ravi, and Prakash Om, High frequency dielectric relaxation in Ba1-xBixTi1-xFexO3 system, International conference on Electro-Ceramics, Delhi University, p-179, Dec., 2009.
  • Kumar Arvind, Baboo S., Prakash Om and Dwivedi R.K., “Studies on Impedance Spectroscopy of Ba1-xBixTi1-xFexO3 system”, International conference on Electro-Ceramics, Delhi University, p-183, Dec., 2009.
  • Kumar1Pawan, Prasad2 Ravikant, Siwach2 P. K., Singh2 H. K. and Dwivedi1 R. K., “Structural and transport properties of B-site Cu doped La0.80Sr0.20MnO3 thin film on LaAlO3 by spray pyrolysis”, International conference on electro-ceramics, held at Delhi University, p-292, Dec. 2009.
  • Gupta1 Anubha, Kumar1 Pawan, Prasad2 Ravikant, Singh2 H. K. and Dwivedi1 R. K., “Compositional tunning of magneto-transport properties in Pb doped NdMnO3”, International conference on electro-ceramics, Delhi University, p-373, Dec. 2009.
  • Parkash Om, Baboo S., Dwivedi R.K., Kumar Ravi and Kumar D., “Ferroelelectric to paraelectric transition in the system Ba1-xLaxTi1-xCrxO3”, International conference on Materials for advanced Technologies, p-D117, Singapore, June 2009.
  • Kumar Pawan, Singh Vikash, Dwivedi R.K., Prasad R. and Singh H.K., “Magneto-electrical studiesin LSMO –BTO bulk and nano composites”, International conference on Materials for advanced Technologies, p-D117, Singapore, Jun 2009.
  • Dwivedi R.K., Kumar D. and Parkash Om, “Dielectric characterization of La and Cr substituted bariumtitanate  perovskite oxide”, International symposium on Advanced Functional Materials-2006 (AFM-06), IIT Bombay, Feb., 2006.
  • Dwivedi R.K. and Bahadur D., “Nano synthesis of lead doped neodymium manganite powder and characterization”, International conference on Nanoscience and Technology (ICONSAT-06) held at IIT Delhi, Mar., 2006.
  • Dwivedi R. K., Kumar Devendra, Parkash Om, Pandey L. and Srivastav K.K. “Effect of processing route on dielectric behaviour of valence compensated Sr0.50Ca0.15La0.35Ti0.65Co0.35O3 ceramic”, CIMTEC-98, World Ceramic Conference and Forum on New Materials, Faenza Italy, June, 1998.
  • Agrawal S. L, Dwivedi R.K. and Singh R.P.  “Thermally deposited WO3 thin film for PEC applications”, VIth International conference on Photo Voltaic Science and Engineering, NPL New Delhi,Feb., 1991.

National Conferences

  • Dwivedi1 R. K., Baboo2 Surendra, Kabra3 V.K., D. Kumar3, and Prakash3 Om “Dielectric property and structure correlation in Ba1-xLaxTi1-xCrxO3”, National Conference on Mesogenic and Ferroic Materials (CMFM09)”,  Department of Physics, BHU, Varanasi, Jan.9-11, 2009.
  • Dwivedi R. K., Parkash Om and Kumar Devendra “AC conduction behaviour in valence compensated Ca1-xLaxTi1-xCrxO3 ceramic system”,  XIth Annual General Meeting MRSI, Baroda Gujarat, Feb., 2000.
  • Dwivedi R. K., Parkash Om and Kumar Devendra “AC conduction behaviour in valence compensated Ca1-xLaxTi1-xCrxO3 ceramic system”,  XIth Annual General Meeting MRSI, Baroda Gujarat, Feb., 2000.
  • Dwivedi R. K., Parkash Om and Kumar Devendra “Structural studies of CaTiO3 – LaCrO3 solid solution perovskite oxide”, (SRTCRA – 2000), Jadavpur, Calcuuta, Sept., 2000.
  • Dwivedi R. K., Srivastav K.K., Kumar Devendra and Parkash Om, “Low temperature dielectric behaviour in valence compensated perovskite Ba1-xLaxTi1-xCrxO3 system”, Xth Annual General Meeting MRSI,  RRL Bhopal, Feb., 1999.
  • Dwivedi R. K., Pandey L., Kumar Devendra and Parkash Om “Impedance spectroscopic studies in Sr0.50Ca0.15La0.35Ti0.65Co0.35O3 ceramic”, Xth Annual General Meeting MRSI, RRL Bhopal, Feb., 1999.
  • Dwivedi R. K., Kumar Parkash Devendra and Om “Paraelectric to ferroelectric transition in valence compensated perovskite system Ba1-xLaxTi1-xMnxO3”, National Seminar on Ceramic engineering – challenges of 21st Century, Institute of Technology, BHU, Feb., 1999.
  • Srivastav K.K., Dwivedi R. K., Kumar Devendra and Parkash Om “Electrical conduction behaviour of valence compensated system BaSn1-xCoxO3”, National Seminar on Ceramic engineering – challenges of 21st Century, Institute of Technology, BHU, Feb., 1999.
  • Dwivedi R. K., Parkash Om and Kumar Devendra “Compositional dependence of ferroelectric to paraelectric phase transition in BaTiO3 – LaCrO3 solid solution”, Symposium for condensed Matter Physics,  Jadavpur Calcutta, India, Dec., 1999.
  • Dwivedi R. K., Kumar Devendra, Pandey L. and Parkash Om “Dielectric behaviour in valence compensated system Ba1-xLaxTi1-xCrxO3”, IXth National Seminar on Ferroelectrics and Dielectrics, NPL New Delhi, October, 1998.
  • Dwivedi R. K., Kumar Devendra and Parkash Om “Snthesis, structure and dielectric behaviour in valence compensated Ca1-xLaxTi1-xCrxO3 system”, IXth Annual General Meeting, MRSI, IIT Chennai, February, 1998.
  • Dwivedi R.K., Christopher C.C., Kumar Devendra and Parkash Om “Barrier layer formation in the system Sr1-xLaxTi1-xCoxO3”, VIIIth National Seminar on Ferroelectrics and Dielectrics, Nagpur, Oct. 1996 (Best paper presentation award).

National Journals

  • Katare Rajesh, Pandey L., Dwivedi R.K., Parkash Om and Kumar Devendra “A novel approach based on impedance spectroscopy for measurement of magnetic permeability of ceramics” Indian J. of Engineering and Materials Science,  vol 6 p-34, 1999 [Indexed in SCOPUS, Impact factor: 0.193, Cited by 01].

Dr. Sudha Srivastava:
Publications :

  • Shikha Sharma, Nidhi Gupta and Sudha Srivastava “Modulating Electron Transfer Properties of Gold Nanoparticles for Efficient Biosensing”Current Nanoscience (communicated).
  • Gajendra B. Singh, Sanjay Gupta, Sudha Srivastava, and Nidhi Gupta Biodegradation of Carbazole by Newly Isolated Acinetobacter spp.Bulletin of Environmental Contamination and Toxicology DOI: 10.1007/s00128-011-0382-0  2011.
  •  Gajendra B. Singh, Sanjay Gupta, Sudha Srivastava, and Nidhi Gupta, “Evaluation of carbazole degradation by Enterobacter sp. Isolated from
    Hydrocarbon contaminated soil” Recent Research in Science & Technology (in press) 2011.
  • Singh G. B, Srivastava A., Saigal A., Aggarwal S. Bisht S. Gupta S., Srivastava S.,. Gupta N “Biodegradation of Carbazole and Dibenzothiophene by Bacteria Isolated from Petroleum Contaminated Sites” Bioremediation (in press) 2011.
  • Aditi Shrivastav and Sudha Srivastava “Medicinal plants used worldwide for treating diabetes” Journal of tropical forestry26(1),14, 2010.
  • Sudha Srivastava, Upendra Harbola and Shankar P. Das“Anomalous Stretching Behavior in a simple Glass forming Liquid”
    Phys. Rev. E 65:051506 (2002)
  • Sudha Srivastava and Shankar P. Das “Transport Coefficients at Metastable Densities from models of Generalized Hydrodynamics”  J. Chem. Phys., 116:2529(2002)
  • Charanbir kaur, Sudha Srivastava and Shankar P. Das “Dynamics of a Metastable Liquid: Comparison of Results from Two Different Approaches” Phys. Lett. A 300/2-3: 291 (2002)
  • Sudha Srivastava and Shankar P. Das “Dynamic Response in a supercooled Liquid” Solid State Physics 575 (2001).
  • Sudha Srivastava and Shankar P. Das “Metastable state dynamics and power law relaxation in a supercooled liquid”.  Phys. Rev. E, 63:011505 (2001).
  • Sudha Srivastava and Shankar P. Das  “Fragility and Boson Peak formation in a supercooled liquid” Phys. Letters A, 286/1:76 (2001).
  • Sudha Srivastava and Shankar P. Das “Temperature Dependence of Secondary Relaxation in a Supercooled Liquid” Int. Journal of Phys. B, 15:4199(2001)
  • Shankar P. Das and Sudha Srivastava “A Schematic model of glassy relaxation through dynamic Coupling with the defect motions”. Phys. Letters A, 266:58 (2000).

Books/Monograms :

  • “Role of vibrational modes in structural relaxation in a supercooled liquid”, Shankar P. Das and Sudha Srivastava in “Slow Dynamics in Complex System” – Edited by Michio Tokuyama and Irwin Oppenheim, 1999 American Institute of Physics (AIP).

Mr. Kirmender Singh

  • “Transconductance Related Analysis of EKV MOSFET Model for a 0.35 micron CMOS Technology Node “, K. Singh , A. B. Bhattacharyya . IEEE Proceedings of the 17th International Conference “Mixed Design of Integrated Circuits and Systems (MIXDES-2010)”, Wroclaw, Poland held on June 24-26 2010.

Mrs. Shruti

  • “An area efficient Implementation of Reed-Solomon Encoder for DVB-H Protocol”, S. Sabharwal, A. Noor. Proceedings of 2nd national conference of resent trends in information systems (RETIS-2008), Jadavpur University Calcutta held on 7-9 Feb 2008.
  • “Implementation of AHB Interface as SDR-SDRAM Controller’s CPU Interface”, proceedings of 2nd national conference, Sapna Gupta, Arti Noor, Shruti Sabharwal. INDIACom-2008, BVICAM-2008, Delhi held on 8-9 Feb 2008.
  • “Comparative Analysis of Subthreshold Leakage Reduction techniques using stack and VTCMOS technique” Syed Murtuza Hasnain, Nikhil Ahuja, Arti Noor, Shruti Sabharwal. Proceedings of National conference on modern trends in electronics and communication systems (MTECS-2008), AMU, Aligarh held on 8-9th March 2008.

Mr. Tanuj Chauhan
Chauhan, T. & Bhagabati, C.D. & Kumar, V., 2011. Era of Energy Harvesting: µ -Energy Scavengers using Microsystems (MEMS) Technology. In: International Journal of Engineering Sciences and Management (ISSN No. 2231-3273), Vol. 1, Issue 1, pp 75-79.

Dr. Geetika Srivastava  Publications:

  • Geetika and A.M. Umarji “The study of Morphotropic Phase Boundary in PZT-PZN systems”, Materials Science and Technology Conference and Exhibition, MS and T’08, v 1, p 286-292, 2008.
  • Geetika and A. M. Umarji, “The influence of Zr/Ti content on the morphotropic phase boundary in the PZT–PZN system”, Mater. Sci. Eng. B, 167 (2010) 171-176.

National and International Conferences:

  • “Synthesis, sintering and properties of PZT-PZN composition through low temperature pyrochlore route”, Conference on Functional Metamaterials at the Nanoscale. (FMN 2005), July 2005. Materials Research Center , Indian Institute of Science Bangalore, India : Poster Presentation
  • Structural and Dielectric studies on PZT-PZN composition prepared via low temperature pyrochlore route”, 17th Annual General Meeting of MRSI-AGM 2006 on Bio, Biomedical and Natural Materials, February 2006, Lucknow University, India, Poster Presentation
  • “Quantitative phase analysis in PZT-PZN system”, 10th International conference on Advanced Materials, IUMRS-ICAM, October 2007, Bangalore, India,PosterPresentation
  • “The study of morphotropic phase boundary in PZT-PZN system”, Materials Science and Technology Conference and Exhibition, MS and T’08, October 2008, Pittsburg, Pennsylvania, USA : Oral Presentation
  • “The effect of Li and Mn addition in PZT-PZN system”, December 2009, International Conference on Electroceramics (ICE 2009), Delhi University, India : Poster Presentation
  • “Temperature dependent Structural and Dielectric Investigations on PbZr0.5Ti0.5O3 solid solution at Morphotropic Phase Boundary”, International Conference on advanced Functional Materials (ICAFM 2009), December 2009, Trivandrum, India : Poster Presentation
  • “The Study of Dielectric, Pyroelectric and Piezoelectric Properties on Hot Pressed PZT-PMN systems”, Recent Advances in Materials Science & Engineering : A Multidisciplinary Approach [RAMSE 2010] October, 2010, JUET, Guna : Oral Presentation
  • A poster presentation at MRS Fall meeting 2010, Boston, USA.

Dr. Poonam Goel

  • Poonam Goel, “CPW-MS transition with embedded DC block for hybrid RF system,” Communicated
  • Poonam Goel, K. J. Vinoy, “A Low Cost Approach for the Fabrication of Microwave Phase Shifter on Laminates,” accepted in Journal of Microsystem Technol Springer (2011), DOI : 10.1007/s00542-011-1342-7.
  • Poonam Goel, K. J. Vinoy, “A Low-cost Phased Array Antenna Integrated with Phase Shifters Co-fabricated on the Laminate,” Progress in Electromagnetic Research PIERB 30, page 255-277, 2011
  • Poonam Goel, K.J. Vinoy,” A Low Cost Fabrication Approach for Electrostatically Actuated Phase Shifter on Printed Circuit Board for  Phased Array Antenna,” paper presented, national conference on challenges in Micro/Nano Electronics,SIT Tumkur, India, March 26-27, 2010
  • Poonam Goel, K.J.Vinoy, “An Electrostatically Actuated Phase Shifter on Printed Circuit Board for a Low cost Phased Array Antenna”, poster, National Conference on MEMS, Smart Structures and Materials, at Central Glass and Ceramic Research Institute, Kolkata, India, October 14-16, ISSS-2009

Research Areas:  (linked to proje4ct details on next pages)

  • Micro-inductor design, process development, and modeling for silicon integrated RF circuits
  • Quartz crystal microbalance based gas sensor
  • Micro-power CMOS temperature sensor design
  • CMOS Building Blocks for Signal Conditioning and Signal Processing Circuits for Smart Sensors
  • RF MEMS building block
  • Design and development of Piezo actuated micro-pump
  • Optimization of design parameters of a piezoelectric actuator
  • ‘Design and simulation of a MEMS based comb drive pressure sensor
  • Designing a Nanoparticle based glucose biosensor

MICRO-INDUCTOR DESIGN, PROCESS DEVELOPMENT AND MODELING FOR SILCON NTEGRATED RF CIRCUITS

Micro-Inductors are now emerging as an integral component in RF integrated circuits with applications in Voltage Controlled Oscillators, Low Noise Amplifiers, Matching Circuits etc.. MEMS technology provides additional options to meet some of the stringent specifications associated with RF Micro-Inductor. The objective of the program is to develop a physics-based design approach which is explicitly related to dimensions of the inductor and process parameters. Coplanar spiral inductors with rectangular geometry and grounded guard ring have been considered as the selected structure because of its common usage. An analytical model is being developed which allows computation of internal and external self inductances along with the positive and negative mutual inductances in terms of layout parameters of the inductor. The approach allows the study of the effect of coplanar guard ring on the inductor design. The fabrication of the inductor is being undertaken at IIT Delhi, as a collaborative program using bulk micromachining technique, to mitigate substrate related losses. The dimensions and structure selected conform to IITD process facility and uses low temperature sputtering process. The DC inductor model being developed for rectangular geometry with uniform strips and spacing are amenable to be extended for non-rectangular structures as well.  The analytical model developed has been benchmarked against field simulators such as ASITIC, and Fast Henry. A Computer-Aided design program is under development which is under evaluation.

Team

  • Prof. AB Bhattacharyya  (Prof., JIIT)
  • Prof. Sudhir Chandra (Prof., IIT-D)
  • Mr. Hardik (Ph.D Scholar, IIT-D Collaborator)
  • Mr. Vibhu Srivastava (PG Student, JIIT)
  • Ms. Pallavi Tyagi (PG Student, JIIT)
  • Dr. Poonam Goel (Project faculty, JIIT)

QUARTZ CRYSTAL MICROBALANCE BASED GAS SENSOR

Quartz Crystal microbalance (QCM), also known as acoustic sensors are widely used for detecting the change of resonant frequency as a function of change in mass. The value of the quartz resonance frequency depends both on the characteristics of the crystal and on those of the sensitive layer coated on the Quartz Crystal.

The program of Quartz Microbalance based Gas Sensor have the following components:

  • Development of an indigenous QCM Oscillator using AT-Cut Quartz operating at 5 MHz meeting the specification of gas sensor requirement. The QCMB design is planned to be implemented through UG/PG Major/Minor projects.
  • An integral part of QCMB development apart from study of various types of Oscillators under liquid loading condition is the basic study on modeling and parameter extraction of Quartz crystal and simulation studies on noise sensitivity, dependence on electrode size on fundamental and harmonic responses etc.
  • Development of experimental setup for gas delivery system for chemical reaction on the crystal surface between the incoming gas and deposited film on the Quartz electrode, Control of flow and gas composition and automatic data acqistion.

Team

  • Prof. A.B. Bhattacharyya (ECE)
  • Mrs. Shruti Kalra (Faculty, ECE)
  • Ivneet Paramjeet Singh Makkar (UG 4th Yr.)

Micropower CMOS Temperature Sensor Design

Temperature Sensors are finding widespread applications in diverse domains such as biomedical, process and portable systems. In addition, temperature sensors are emerging as an integral building block in SOC’s for monitoring on-chip performance.

The program initiated has following components:

  • Survey of representative silicon sensor chips commercially available and evaluation of its performance.
  • Develop micropower CMOS and CMOS compatible CLBT based building block of analog/ digital temperature sensors using deep submicron CMOS technology at 0.35um node.
  • Develop thermal models for basic building blocks constituting the temperature sensor cell.
  • Study the effect of temperature on MOSFET model parameters.

Team:

  • Prof A.B. Bhattacharyya (ECE)
  • Mr. Kirminder Singh (Faculty, ECE)
  • Mr. Abhinav Gaur (UG-4th Yr.)

CMOS Building Blocks for Signal Conditioning and Signal Processing Circuits for Smart Sensors

OBJECTIVES/SCOPE:

  • Smart sensors integrate MEMS devices with associated signal processing circuits. The challenges lies in ensuring realization of both MESM and signal processing circuit in foundry available standard process line
  • Identify a standard CMOS foundry  process line in which the target MEMS and signal processing can be realized on Silicon
  • Select core signal processing and conditioning (analog and mixed signal) blocks and develop cell library

Guidelines:

The program at JIIT  in the area of MEMS revolves around : (i) Temperature sensor, (ii) Cantilever based mechanical filter (iii) Pressure Sensors (iV) Gas Sensor (V) Inductors and transformers for RF application

EXPECTED OUTPUT:

  • Literature survey in specific circuit and technical MEMS
  • Circuit design, simulation, layout & Technical Memo
  • The work should feed to at leaset a IEEE conference paper to merit A/A+ grade

References:

  • CMOS Analog Circuit Design, Philip E. Allen and Douglas R. Holdberg, Holt, Reinhart and Winsten Publisher, 1987

RF MEMS Building Blocks

Presently RF MEMS is one of the most promising technologies for wireless systems due to its advantages such as low insertion losses, almost negligible DC power consumption, highly linear characteristics etc. The aim of the project is to design, fabricate and characterize basic building blocks RF MEMS in a modular way. RF MEMS switch, varactor, distributed MEMS transmission lines, micro-machined coplanar waveguide transmission lines for RF systems are the basic building blocks under study. Major issues in RF MEMS devices are high cost and high insertions losses when realized using conventional approaches. Our approach is initially on realization of these building blocks using low cost fabrication technology on microwave laminate. The projects include modeling, design, fabrication and characterization of RF MEMS devices.

Team:  Dr. Poonam Goel (Project Faculty, MEMS center)
Prof. A.B. Bhattacharyya (Emeritus Prof ECE Dept)

DESIGN AND DEVELOPMENT OF PIEZO ACTUATED MICRO-PUMP

In the present technology, smart material systems are playing a very important role in order to miniaturize the integrated electronics and devices. Microelectro-mechanical systems (MEMS) is a integration of sensors, actuators and integrated circuits on a silicon based substrates with micro fabrication technology.  The preparation of  piezoelectric films, being the most exploited form of materials in electronic devices for sensor and actuator applications will be considered as a part of this project.
Design and development of miniaturized devices is an essential part of precision control systems for many industrial applications.  Piezo actuated micro-pump is one of the MEMS devices which has wide applications in the field of chemical analysis, biological and chemical sensing, and drug delivery and fuel delivery in automobile and aerospace industries. These devices can be used in sensing, pumping, mixing, monitoring and controlling volume of fluids.

In view of the above, it has been decided to develop the following at JIIT;

  • Synthesis and optimization of PZT properties in our lab in the form of bulk and thin film samples
  • The piezoelectric films after optimizations will be deposited on silicon substrate
  • Design and simulation of PZT based actuator  using ‘Intellisuit’ software
  • This designed actuator (Piezo actuated micro pump) will be used to optimized flow rate for fluid delivery systems by applying suitable input voltage.

Team Member:

Faculty:  Dr. R. K. Dwivedi, PMSE
Student:  Subhash (Ph.D. student)

Optimization of the design parameters of a piezoelectric actuator

The beams, diaphragms or cantilevers are being extensively used as actuators with different modes of actuation in microsystem devices. The piezoelectric effect being the most exploited mode.Since, the scaling down of feature size generally leads to the improved performance of the device and therefore, it is important to understand the scaling factors and their influence on the system. In this project, a cantilever beam has been chosen as the element of study, consisting of a piezoelectric polymer like PVDF with a thin permalloy layer coating on one side of it. This piezoelectric cantilever will be designed using COMSOL software and an optimum design will be found by adjusting different parameters and dimensions

Student involved in the project: Mr. Rashiya Sharma
Supervisors : Dr. Geetika and Dr. R. K. Dwivedi

DESIGN AND SIMULATION OF A MEMS-BASED COMB-DRIVE PRESSURE SENSOR

MEMS Technology offers realization of micro machined Pressure Sensors with high sensitivity features. These Pressure Sensors are highly sensitive and has huge application in large number of products. They are cheap and consume negligible power.
Applications
MEMS-based sensors are a crucial component in automotive electronics, medical equipment, smart portable electronics such as cell phones, PDAs, and hard disk drives, computer peripherals, and wireless devices. These sensors began in the automotive industry especially for crash detection in airbag systems. Throughout the 1990s to today, the airbag sensor market has proved to be a huge success using MEMS technology. MEMS-based sensors are now becoming pervasive in everything from inkjet cartridges to cell phones. Every major market has now embraced the technology.

The Project aims

  • To design and develop MEMS based Capacitive Pressure Sensor.
  • To optimize the design with MEMS Specific Simulators such as Coventorware/Comsol.

TEAM:

Mr. Tanuj Chauhan (Sr. Lecturer, ECE)
Hari Ballabh Agrawal (08102189)
Gaurav Jain (08102270)

Designing a Nanoparticle based glucose biosensor

Dr. Sudha Srivastava is working on development of  piezoelectric immune- biosensor, using quartz crystal microbalance. Their group’s main focus is on synthesis and characterization of nanoparticles of suitable material  – metals, enzyme and antibody; developemnt of immobilized receptor film and fabrication of biosensor and its  sensitivity and stability analysis.

Project submitted for extramural funding to DBT, Govt. of India:

Quartz crystal microbalance based immuno-/enzymatic biosensor studies
PI : Dr. Sudha Srivastava
Co-PI : Prof. A.B. Bhattacharyya  and
Co-PI : Ms. Shruti Kalra

Facilities

Softwares @ JIIT MEMS  DESIGN CENTER

  • COVENTORWARE2010
  • INTELLISUITE
  • COMSOL 4.2
  • MEMS+2.0

Supporting VLSI software

  • Tanner Pro
  • Mentor Graphics
  • Modeling tools
  • Asitic (UCBerkley)
  • FasHenry (MIT Cambridge) 

Hardware  @ JIIT MEMS  DESIGN Center

  • Quartz Microbalance
  • VNA (in process)
  • PCB fabrication Facility (in process)

Courses & Laboratories

  • Microelectronics and MEMS Technology
  • Sensor Based Experimental Set-up @ JIIT:
  • Impedance matching circuits for SAW filter at 33MHz and its experimental set-up.
  • Measurement of Quartz crystal parameters

Thesis:

  • Ashish Sharvana (TBD)
  • Piyush Jain To develop automation tool for BSIM3v3 to EKV conversion and validation with reference model BSIM

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